Abstract

Cu₂O thin films with tailored electrical properties were produced by 25 s plasma reduction of CuO films and immediate oxidation under oxygen flows of 0, 3, 6, 9, 12, 15, and 18 sccm. CuO target films were easily prepared by the dip-coating method and annealing at 400 °C. CuO was transformed to Cu₂O by employing an argon plasma treatment devised in our laboratory. Cu₂O was produced as the only crystalline phase detected, and the films exhibited smooth surfaces with roughness around 5 nm. All films presented high reflectance in the fundamental absorption region (30%) and high transmittance in the transparency region of Cu₂O (65%). The good optical behavior permitted the accurate calculation of optical constants by fitting reflectance and transmittance to an optical model designed with the help of Film Wizard™ software. Variations with oxygen injection were detected for the components of the dielectric function, index of refraction, and absorption coefficient. More importantly, the electrical properties of Cu₂O showed a clear dependence on O₂ injection. Even though resistivity was on average 80 Ω∙cm, hole mobility varied in the span of 0.75–3.2 cm²/V s, and hole density in the range of 10¹⁶–10¹⁷/cm³. Upon storage in open-air conditions, the mobility of Cu₂O films was increased to 3.8 cm²/V s. The Cu₂O films produced show similar quality to those obtained by a sputtering deposition method. However, simpler equipment was employed. The plasma method studied is promising for fast mass production of Cu₂O thin films.

中文翻译：

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氩等离子体还原CuO薄膜后注氧制备Cu 2 O薄膜的电性能

摘要

通过对CuO薄膜进行25 s的等离子体还原，并在氧气流量为0、3、6、9、12、15和18 sccm的条件下立即氧化，可以生产具有定制电性能的Cu ₂ O薄膜。通过浸涂法和在400°C下退火可以轻松制备CuO靶膜。的CuO转化成Cu ₂通过使用在我们的实验室设计了一个氩等离子体处理O操作。产生了Cu ₂ O，作为唯一检测到的结晶相，该膜的表面光滑，粗糙度约5 nm。所有薄膜在Cu ₂的基本吸收区域均表现出高反射率（30％），在透明区域表现出高透射率O（65％）。良好的光学性能可通过将反射率和透射率拟合到借助Film Wizard™软件设计的光学模型来精确计算光学常数。检测到氧注入的变化，包括介电功能，折射率和吸收系数。更重要的是，Cu ₂ O的电性能显示出对O ₂注入的明显依赖性。即使电阻率平均为80Ω∙cm，空穴迁移率在0.75–3.2 cm ² / V s的范围内变化，空穴密度在10 ¹⁶ –10 ¹⁷ / cm ³的范围内。在露天条件下储存时，Cu ₂的迁移率O膜增加到3.8cm ² / V s。产生的Cu ₂ O膜显示出与通过溅射沉积法获得的膜类似的质量。但是，使用了更简单的设备。研究的等离子体方法有望快速大量生产Cu ₂ O薄膜。