Abstract In this paper we report synthesis of highly conducting and optically transparent indium tin oxide (ITO) films with high charge carrier mobility using radio frequency (RF) magnetron sputtering without any post-annealing treatment. All deposited films show high optical transmittance in the visible region (> 85%) and the band gap ~ 3.54 eV. Based on the x-ray diffraction, atomic force microscopy, scanning electron microscopy and Hall measurement analysis the influence of RF power on ITO crystal growth mechanism have been discussed. It has been observed that with increasing RF power the preferred crystal orientation in films changes from (222) to (400) direction. A significant increase in charge carrier mobility have been observed with change in crystal orientation from ~ 45 cm2 V−1 s−1 in (222) direction to ~ 380 cm2 V−1 s−1 in (400) direction. At optimized RF power (90 W), ITO film with maximum figure of merit (φTC = 150×10−3 Ω−1) with high optical transparency (~ 94%) and high conductivity (2.8 × 103 Ω−1cm−1) have been obtained. We believe that employment of such high mobility and high figure of merit ITO films can have potential applications in various opto-electronic devices such as smart windows, gas sensors, solar cells, light spreading electrode in light emitting diodes and organic light emitting diode displays.

中文翻译：

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射频磁控溅射制备具有高迁移率和品质因数的(400)-取向氧化铟锡薄膜

摘要 在本文中，我们报告了使用射频 (RF) 磁控溅射合成具有高电荷载流子迁移率的高导电和光学透明氧化铟锡 (ITO) 薄膜，无需任何后退火处理。所有沉积的薄膜在可见光区都显示出高透光率 (> 85%) 和带隙 ~ 3.54 eV。基于X射线衍射、原子力显微镜、扫描电子显微镜和霍尔测量分析，讨论了射频功率对ITO晶体生长机制的影响。已经观察到随着RF功率的增加，薄膜中的优选晶体取向从（222）到（400）方向变化。随着晶体取向从（222）方向的~45 cm2 V-1 s-1 到（400）方向的~ 380 cm2 V-1 s-1 变化，已经观察到电荷载流子迁移率的显着增加。在优化的射频功率 (90 W) 下，具有最大品质因数 (φTC = 150×10−3 Ω−1)、高透光率 (~ 94%) 和高导电率 (2.8 × 103 Ω−1cm−1) 的 ITO 薄膜已经获得。我们相信，采用这种高迁移率和高品质因数的 ITO 薄膜可以在各种光电器件中具有潜在的应用，例如智能窗、气体传感器、太阳能电池、发光二极管中的光扩散电极和有机发光二极管显示器。8 × 103 Ω−1cm−1) 已获得。我们相信，采用这种高迁移率和高品质因数的 ITO 薄膜可以在各种光电器件中具有潜在的应用，例如智能窗、气体传感器、太阳能电池、发光二极管中的光扩散电极和有机发光二极管显示器。8 × 103 Ω−1cm−1) 已获得。我们相信，采用这种高迁移率和高品质因数的 ITO 薄膜可以在各种光电器件中具有潜在的应用，例如智能窗、气体传感器、太阳能电池、发光二极管中的光扩散电极和有机发光二极管显示器。