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Toward High Solar Cell Efficiency with Low Material Usage: 15% Efficiency with 14 μm Polycrystalline Silicon on Glass
Solar RRL ( IF 6.0 ) Pub Date : 2020-03-20 , DOI: 10.1002/solr.202000058
Siddhartha Garud 1 , Cham Thi Trinh 1 , Daniel Abou-Ras 2 , Bernd Stannowski 3 , Rutger Schlatmann 3 , Bernd Rech 1 , Daniel Amkreutz 1
Affiliation  

Liquid‐phase‐crystallized silicon (LPC‐Si) is a bottom‐up approach to creating solar cells with the potential to avoid material loss and energy usage in wafer slicing techniques. A desired thickness of silicon (5–40 μm) is crystallized with a line‐shaped energy source, which is a laser, herein. The first part reports the efforts to optimize amorphous silicon contact layers for better surface passivation. The second part covers laser firing on the electron contact. It enables a controllable trade‐off between charge collection and fill factor (FF) by creating a low resistance contact, while preserving a‐Si:H (i) passivation in other areas. Short‐circuit current density (JSC) is observed to be up to 33:1 mA cm−2, surpassing all previously reported values for this technology. Open‐circuit voltage (VOC) of up to 658 mV also exceeded every previous value published at a low bulk doping concentration (1 × 1016 cm−3). Laser firing reduced JSC by 0:6 mA cm−2 on average but improved the FF by 22.5% absolute on average, without any significant effect on VOC. Collectively, these efforts have helped in achieving a new in‐house record efficiency for LPC‐Si of 15.1% and show a potential to reach 16% efficiency in the near future with optimization of series resistance.

中文翻译:

以低材料消耗实现高太阳能电池效率:玻璃上14μm多晶硅的效率达到15%

液相结晶硅(LPC-Si)是一种自下而上的方法,可以制造太阳能电池,从而有可能避免晶圆切片技术中的材料损失和能源消耗。使用线形能量源(此处为激光)可结晶出所需厚度的硅(5–40μm)。第一部分报告了优化非晶硅接触层以实现更好的表面钝化的努力。第二部分介绍了电子触点上的激光发射。通过创建低电阻触点,可在电荷收集和填充因子(FF)之间实现可控的折衷,同时在其他区域保留a-Si:H(i)钝化。观察到短路电流密度(J SC)高达33:1 mA cm -2,超过了该技术以前报告的所有值。在低总体掺杂浓度(1×10 16  cm -3)时,高达658 mV的开路电压(V OC)也超过了每个先前公布的值。激光发射使J SC平均降低了0:6 mA cm -2,但使FF平均提高了22.5%的绝对绝对值,而对V OC没有任何显着影响。总的来说,这些努力帮助实现了LPC-Si内部记录效率达到15.1%的新记录,并显示了在不久的将来通过优化串联电阻达到16%效率的潜力。
更新日期:2020-03-20
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