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Improving the Stability of R2R Printed 1‐Bit Code Generator through Spin‐Coated Multilayer‐Encapsulation Method
Macromolecular Materials and Engineering ( IF 4.2 ) Pub Date : 2020-03-20 , DOI: 10.1002/mame.201900867 Younsu Jung 1 , Amol Marotrao Kale 2 , Jinwha Park 1 , Hyejin Park 1 , Junfeng Sun 1 , Gyan Raj Koirala 1 , Kiran Shrestha 1 , Sagar Shrestha 1 , Sajjan Parajuli 1 , Bijendra Bishow Maskey 1 , Gyoujin Cho 1
Macromolecular Materials and Engineering ( IF 4.2 ) Pub Date : 2020-03-20 , DOI: 10.1002/mame.201900867 Younsu Jung 1 , Amol Marotrao Kale 2 , Jinwha Park 1 , Hyejin Park 1 , Junfeng Sun 1 , Gyan Raj Koirala 1 , Kiran Shrestha 1 , Sagar Shrestha 1 , Sajjan Parajuli 1 , Bijendra Bishow Maskey 1 , Gyoujin Cho 1
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Roll‐to‐roll (R2R) printed electronic devices have great advantages for developing large scale flexible and disposable devices when compared to current Si‐based technology. For practical realization of these advantages, however, R2R printed devices need to surmount device functionality limitations, most urgently high‐power dissipation and poor device stability. To resolve both imperative challenges at once, herein, an all R2R printed complementary metal‐oxide‐semiconductor (CMOS) 1‐bit code generator with spin‐coated multilayer encapsulation method is developed. In order to print CMOS devices by an all‐R2R gravure printing method, electrical amphoteric property of the single walled carbon nanotube (SWCNT) is utilized to fabricate both p‐type and n‐type SWCNT based thin film transistors (TFTs). In addition, printable encapsulating polymeric materials (CYTOP and FG‐3650) are developed to effectively prevent H2O permeation. The resulting CMOS 1‐bit code generator is able to continuously operate for 2 h under ambient conditions without any variation in output voltage and frequency.
中文翻译：
通过旋涂多层封装方法提高R2R印刷1位代码生成器的稳定性
与当前的基于Si的技术相比，卷对卷（R2R）印刷电子设备在开发大规模柔性和一次性设备方面具有巨大优势。但是，为了实际实现这些优势，R2R打印设备需要克服设备功能限制，最迫切的高功耗和较差的设备稳定性。为了立即解决这两个紧迫的挑战，本文开发了一种采用旋涂多层封装方法的全R2R印刷互补金属氧化物半导体（CMOS）1位代码生成器。为了通过全R2R凹版印刷方法印刷CMOS器件，利用单壁碳纳米管（SWCNT）的电两性特性来制造基于p型和n型SWCNT的薄膜晶体管（TFT）。此外，2 O渗透。最终的CMOS 1位代码生成器能够在环境条件下连续运行2小时，而输出电压和频率没有任何变化。
更新日期：2020-03-20
中文翻译：
通过旋涂多层封装方法提高R2R印刷1位代码生成器的稳定性
与当前的基于Si的技术相比，卷对卷（R2R）印刷电子设备在开发大规模柔性和一次性设备方面具有巨大优势。但是，为了实际实现这些优势，R2R打印设备需要克服设备功能限制，最迫切的高功耗和较差的设备稳定性。为了立即解决这两个紧迫的挑战，本文开发了一种采用旋涂多层封装方法的全R2R印刷互补金属氧化物半导体（CMOS）1位代码生成器。为了通过全R2R凹版印刷方法印刷CMOS器件，利用单壁碳纳米管（SWCNT）的电两性特性来制造基于p型和n型SWCNT的薄膜晶体管（TFT）。此外，2 O渗透。最终的CMOS 1位代码生成器能够在环境条件下连续运行2小时，而输出电压和频率没有任何变化。
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