Abstract Integrating functional complex oxides with conventional (“non-oxide”) semiconductors emerges to be an important research field and has been attracting great interest. Because of their superior intrinsic material properties, such as a relatively high dielectric constant and polarization, the utilization of PbZr1-xTixO3 (PZT) materials as a dielectric layer is expected to greatly improve the performance of the GaN high electron mobility transistor. The functional PbZr1-xTixO3 exhibits quite different crystal structures and consequently physical properties depending on the composition. In this work we report the growth of full range of compositions of PZT films on MgO buffered GaN substrates. Besides revealing the temperature effect on phase formation and surface morphology, we demonstrated the strong effect of composition on the growth: pure (1 1 1) phase is formed in Ti-rich PZT (x > 0.48) while pyrochlore impurity phase is found in Zr-rich PZT (x

中文翻译：

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(1 1 1) PbZr1-Ti O3 全范围成分的外延生长在 GaN 上

摘要 将功能性复合氧化物与传统（“非氧化物”）半导体集成成为一个重要的研究领域，并引起了人们的极大兴趣。由于其优异的本征材料特性，例如相对较高的介电常数和极化，使用 PbZr1-xTixO3 (PZT) 材料作为介电层有望大大提高 GaN 高电子迁移率晶体管的性能。功能性 PbZr1-xTixO3 表现出完全不同的晶体结构，因此物理性质取决于成分。在这项工作中，我们报告了在 MgO 缓冲的 GaN 衬底上的全范围 PZT 膜成分的生长。除了揭示温度对相形成和表面形态的影响外，我们还证明了成分对生长的强烈影响：