Magnetic semiconductors have aroused interest due to their various functionalities related to spintronic devices. Manganese (Mn) as a substitutional impurity in A₃B₅ semiconductors supplies not only holes, but also localized spins. The ejection of Mn atoms with an uncompensated magnetic moment leads to the appearance of ferromagnetic properties. The most suitable material characterized by long-term spin dynamics is n-type GaAs. In p-type GaAs, the spin relaxation time of electrons is generally much shorter. For purposes of this research, electron-spin relaxation times in 3D and 2D p-type GaAs were studied. Calculation of impurity densities and charge state of magnetic acceptors demonstrate the essential composition of the material. Comparison of theoretical and experimental data in optical-spin orientation of electrons reveal the longest spin relaxation time of 77 ns in 2D GaAs:Mn, less than twice the best time in the p-type 3D GaAs material.

磁性半导体由于其与自旋电子器件相关的各种功能而引起人们的兴趣。锰（Mn）作为A ₃ B _5中的替代杂质半导体不仅提供空穴，而且提供局部自旋。具有未补偿磁矩的Mn原子的喷射导致出现铁磁特性。具有长期自旋动力学特性的最合适的材料是n型GaAs。在p型GaAs中，电子的自旋弛豫时间通常要短得多。为了本研究的目的，研究了3D和2D p型GaAs中的电子自旋弛豫时间。磁性受体的杂质密度和电荷状态的计算证明了材料的基本组成。电子的光学自旋取向的理论和实验数据的比较显示，在2D GaAs：Mn中最长的自旋弛豫时间为77 ns，不到p型3D GaAs材料中最佳时间的两倍。