In this article, we report the significant improvement with the tunable character of optical absorption characteristics of MQW (multi quantum well) GaAs/AlGaAs nano-scale heterostructure. The improvement and tunability of the optical characteristics have been studied via optimization of composition of the barrier layer, quantum well width and external uniaxial pressure application on the structure. A six band Kohn-Luttinger (K–L) Hamiltonian has been solved to determine the electrons and hole’s wave functions, their localizations in the structure along with their discrete (dispersed) energies and finally the optical absorption characteristics. Under uniaxial (001) pressure in the range of 5 GPa to 25 GPa, a remarkable improvement in the optical absorption (6000 cm⁻¹ to 9000 cm⁻¹) along with red shift of wavelength has been reported in this paper. Thus, the proposed heterostructure with the optimized Al content can suitably be utilized in the designing of photo-detector and optical sensor operating in the visible-NIR (near infrared) wavelength region.

在本文中，我们报告了MQW（多量子阱）GaAs / AlGaAs纳米级异质结构的光吸收特性的可调特性方面的重大改进。通过优化阻挡层的组成，量子阱宽度和在结构上施加外部单轴压力，研究了光学特性的改善和可调性。解决了六能带Kohn-Luttinger（K–L）哈密顿量，以确定电子和空穴的波函数，它们在结构中的局域性以及它们的离散（分散）能以及最终的光吸收特性。在5 GPa至25 GPa的单轴（001）压力下，光吸收（6000 cm ^-1至9000 cm ^-1）以及波长的红移已在本文中报道。因此，所提出的具有优化的Al含量的异质结构可以适当地用于在可见-NIR（近红外）波长区域中操作的光检测器和光学传感器的设计中。