Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density-functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.

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GaAs中堆垛层错势和激子波函数的微观模型

嵌入在块状晶体中的二维堆垛层错缺陷可以为载流子和激子提供均匀的俘获势。在这里，我们利用最先进的结构成像技术，结合密度泛函和有效质量理论，建立了堆叠故障激子的微观模型。计算了在不同磁场下的反磁位移和激子偶极矩，并将其与GaAs中单个堆叠缺陷所束缚的激子的实验光致发光进行了比较。该模型用于进一步了解激子的性质，该激子的性质与通过堆叠故障对而形成的双阱势垒有关。该微观激子模型可以用作模型的输入，该模型包括激子-激子相互作用，以确定在该系统中可访问的激子相。