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Resonantly Driven Singlet-Triplet Spin Qubit in Silicon
Physical Review Letters ( IF 8.1 ) Pub Date : 2020-03-20 , DOI: 10.1103/physrevlett.124.117701
K. Takeda , A. Noiri , J. Yoneda , T. Nakajima , S. Tarucha

We report implementation of a resonantly driven singlet-triplet spin qubit in silicon. The qubit is defined by the two-electron antiparallel spin states and universal quantum control is provided through a resonant drive of the exchange interaction at the qubit frequency. The qubit exhibits long T2* exceeding 1μs that is limited by dephasing due to the Si29 nuclei rather than charge noise thanks to the symmetric operation and a large micromagnet Zeeman field gradient. The randomized benchmarking shows 99.6% single gate fidelity which is the highest reported for singlet-triplet qubits.

中文翻译:

硅中共振驱动的单重态-三重自旋量子位

我们报告了在硅中谐振驱动的单重态-三重态自旋量子位的实现。量子位由双电子反平行自旋态定义,并且通过以量子位频率共振交换相互作用来提供通用量子控制。量子比特展长Ť2* 超过 1个μs 由于受到相移的限制 29由于对称操作和大的微磁体塞曼磁场梯度,核而不是电荷噪声。随机基准测试显示99.6%的单门保真度,这是单线三重态qubit的最高记录。
更新日期:2020-03-21
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