Topoelectrical (TE) circuits consisting of capacitors and inductors can be designed to exhibit various Weyl semimetal (WSM) phases in their admittance dispersion. We consider a TE heterojunction circuit consisting of a central region sandwiched by source and drain regions. The energy flux transmission across the heterojunction can be tuned to exhibit perfect transmission near normal incidence (Klein tunneling) for one valley and perfect reflection (anti-Klein tunneling) for the other valley by controlling the WSM phases of the heterojunction. Perfect valley-polarized transmission occurs when the dispersion tilt to Fermi velocity ratio in the source region is reciprocal to that in the central barrier region. This unusual flux transmission is ascribed to two factors, i.e., perfect pseudospin (sublattice) polarization at normal incidence and complete decoupling of one of the sublattice polarizations at the critical velocity ratio. The emergence of anti-Klein tunneling by design in TE circuits suggests a possible realization of the effect in real WSM materials.Topoelectrical (TE) circuits consisting of capacitors and inductors can be designed to exhibit various Weyl semimetal (WSM) phases in their admittance dispersion. We consider a TE heterojunction circuit consisting of a central region sandwiched by source and drain regions. The energy flux transmission across the heterojunction can be tuned to exhibit perfect transmission near normal incidence (Klein tunneling) for one valley and perfect reflection (anti-Klein tunneling) for the other valley by controlling the WSM phases of the heterojunction. Perfect valley-polarized transmission occurs when the dispersion tilt to Fermi velocity ratio in the source region is reciprocal to that in the central barrier region. This unusual flux transmission is ascribed to two factors, i.e., perfect pseudospin (sublattice) polarization at normal incidence and complete decoupling of one of the sublattice polarizations at the critical velocity ratio. The emergence of anti-Klein tunneling by design in TE circuits suggests a poss...

中文翻译：

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拓扑外尔半金属电路中的反克莱因隧穿

由电容器和电感器组成的拓扑 (TE) 电路可以设计为在其导纳色散中表现出各种外尔半金属 (WSM) 相。我们考虑一个 TE 异质结电路，它由夹在源极和漏极区域之间的中心区域组成。通过控制异质结的 WSM 相，可以调整穿过异质结的能量通量传输，以在一个谷表现出接近垂直入射（克莱因隧穿）的完美透射和另一个谷的完美反射（反克莱因隧穿）。当源区中色散倾斜与费米速度比与中心势垒区中的色散倾斜互为倒数时，就会发生完美的谷极化传输。这种不寻常的通量传输归因于两个因素，即，法向入射下的完美赝自旋（亚晶格）极化和临界速度比下亚晶格极化之一的完全去耦。在 TE 电路中通过设计反克莱因隧道效应的出现表明该效应可能在实际 WSM 材料中实现。 由电容器和电感器组成的拓扑 (TE) 电路可以设计为在其导纳色散中表现出各种外尔半金属 (WSM) . 我们考虑一个 TE 异质结电路，它由夹在源极和漏极区域之间的中心区域组成。通过控制异质结的 WSM 相，可以调整穿过异质结的能量通量传输，以在一个谷表现出接近垂直入射（克莱因隧道）的完美透射和另一个谷的完美反射（反克莱因隧穿）。当源区中色散倾斜与费米速度比与中心势垒区中的色散倾斜互为倒数时，就会发生完美的谷极化传输。这种不寻常的通量传输归因于两个因素，即垂直入射时完美的赝自旋（亚晶格）极化和临界速度比下亚晶格极化之一的完全去耦。TE 电路中设计的反克莱因隧道效应的出现表明可能...