A cross-point memory architecture will be adopted to make the most of the suitability of resistance change memories for high integration. To achieve this, the development of a selector device that is connected in series to the memory and helps to remove the sneak path current flowing through unselected and half-selected cells is an urgent requirement. In this Letter, we developed a selector based on a simple sandwiched structure of Pt/CoO/ITO and confirmed the nonpolar threshold resistance switching that does not require the first fire process. The selector showed an excellent performance of a very small dispersion of the threshold voltages and resistance in the OFF state with the relative standard deviations of less than 2% each, as well as the quick transition between the OFF and ON states within 50 ns. The scaling law was confirmed in the current, both in the ON and OFF states, I ON and I th. It allows us to analyze I ON and I th, based on which we can reduce the area of the device. The current conduction of the Pt/CoO/ITO selector is ruled by the trap-controlled space charge limited current (SCLC), and the threshold switching from ON to OFF states and vice versa is caused by the transition from the trap-unfilled to the trap-filled SCLC and vice versa, respectively.A cross-point memory architecture will be adopted to make the most of the suitability of resistance change memories for high integration. To achieve this, the development of a selector device that is connected in series to the memory and helps to remove the sneak path current flowing through unselected and half-selected cells is an urgent requirement. In this Letter, we developed a selector based on a simple sandwiched structure of Pt/CoO/ITO and confirmed the nonpolar threshold resistance switching that does not require the first fire process. The selector showed an excellent performance of a very small dispersion of the threshold voltages and resistance in the OFF state with the relative standard deviations of less than 2% each, as well as the quick transition between the OFF and ON states within 50 ns. The scaling law was confirmed in the current, both in the ON and OFF states, I ON and I th. It allows us to analyze I ON and I th, based on which we can reduce the area of the device....

中文翻译：

---

具有陷阱填充控制阈值切换的基于氧化物的选择器

将采用交叉点存储器架构，以充分利用电阻变化存储器的高集成度。为此，迫切需要开发一种与存储器串联连接并有助于消除流经未选和半选单元的潜路径电流的选择器装置。在这封信中，我们开发了一种基于 Pt/CoO/ITO 的简单夹层结构的选择器，并确认了不需要第一次点火过程的非极性阈值电阻切换。该选择器表现出优异的性能，即关断状态下阈值电压和电阻的离散度非常小，相对标准偏差均小于 2%，并且在 50 ns 内在关断和导通状态之间快速转换。定标定律在电流中得到证实，无论是在 ON 状态还是 OFF 状态，I ON 和 I th。它允许我们分析 I ON 和 I th ，我们可以在此基础上减少设备的面积。Pt/CoO/ITO 选择器的电流传导由陷阱控制的空间电荷限制电流 (SCLC) 控制，阈值从 ON 状态切换到 OFF 状态，反之亦然是由从陷阱未填充到陷阱填充SCLC，反之亦然。将采用交叉点存储器架构，以充分利用电阻变化存储器的高集成性。为此，迫切需要开发一种与存储器串联连接并有助于消除流经未选择和半选择单元的潜路径电流的选择器设备。在这封信中，我们开发了一种基于 Pt/CoO/ITO 的简单夹层结构的选择器，并确认了不需要第一次点火过程的非极性阈值电阻切换。该选择器表现出优异的性能，即关断状态下阈值电压和电阻的离散度非常小，相对标准偏差均小于 2%，并且在 50 ns 内在关断和导通状态之间快速转换。定标定律在电流中得到证实，无论是在 ON 状态还是 OFF 状态，I ON 和 I th。它允许我们分析 I ON 和 I th，在此基础上我们可以减少设备的面积.... 该选择器表现出优异的性能，即关断状态下阈值电压和电阻的离散度非常小，相对标准偏差均小于 2%，并且在 50 ns 内在关断和导通状态之间快速转换。定标定律在电流中得到证实，无论是在 ON 状态还是 OFF 状态，I ON 和 I th。它允许我们分析 I ON 和 I th，在此基础上我们可以减少设备的面积.... 该选择器表现出优异的性能，即关断状态下阈值电压和电阻的离散度非常小，相对标准偏差均小于 2%，并且在 50 ns 内在关断和导通状态之间快速转换。定标定律在电流中得到证实，无论是在 ON 状态还是 OFF 状态，I ON 和 I th。它允许我们分析 I ON 和 I th，在此基础上我们可以减少设备的面积....