Magnetic insulators (MIs) have attracted great attention because of their low Gilbert damping, long spin transmission length, and no Ohmic loss. In this study, the high quality TbIG films with perpendicular magnetic anisotropy were epitaxially grown on GGG (111) substrates. In TbIG/Pt bilayers, the angular dependence of coercivity is found to obey the Kondorsky model, suggesting the magnetization reversal mechanism of magnetic domain nucleation and expansion. The transverse component of spin Hall magnetoresistance (SMR), which is analogous to the planar Hall resistance in a ferromagnetic metal, is found to be about seven times larger than the SMR-induced anomalous Hall resistance (analogous to the anomalous Hall resistance in a ferromagnetic metal). Moreover, the phase diagrams of the current-induced magnetization switching with different angles and magnitudes of the assisting magnetic field were drawn for the TbIG/Pt bilayers. The current-induced damping-like effective field (HDL) characterized by the harmonic measurements was evaluated to be about 164 Oe/ 10 8 A cm − 2. By providing a comprehensive investigation of magnetization switching behaviors in MIs, our results will promote the application of ultralow-dissipation MI based spintronic devices.Magnetic insulators (MIs) have attracted great attention because of their low Gilbert damping, long spin transmission length, and no Ohmic loss. In this study, the high quality TbIG films with perpendicular magnetic anisotropy were epitaxially grown on GGG (111) substrates. In TbIG/Pt bilayers, the angular dependence of coercivity is found to obey the Kondorsky model, suggesting the magnetization reversal mechanism of magnetic domain nucleation and expansion. The transverse component of spin Hall magnetoresistance (SMR), which is analogous to the planar Hall resistance in a ferromagnetic metal, is found to be about seven times larger than the SMR-induced anomalous Hall resistance (analogous to the anomalous Hall resistance in a ferromagnetic metal). Moreover, the phase diagrams of the current-induced magnetization switching with different angles and magnitudes of the assisting magnetic field were drawn for the TbIG/Pt bilayers. The current-induced damping-like effective field (HDL) characterized by the ha...

中文翻译：

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磁场和电流在垂直 TbIG/Pt 双层中引起的磁化转换

磁绝缘体（MI）因其低吉尔伯特阻尼、长自旋传输长度和无欧姆损耗而备受关注。在这项研究中，具有垂直磁各向异性的高质量 TbIG 薄膜在 GGG (111) 衬底上外延生长。在 TbIG/Pt 双层中，发现矫顽力的角度依赖性服从 Kondorsky 模型，表明磁畴成核和扩张的磁化反转机制。自旋霍尔磁阻 (SMR) 的横向分量类似于铁磁金属中的平面霍尔电阻，被发现比 SMR 引起的异常霍尔电阻（类似于铁磁金属中的异常霍尔电阻）大七倍左右。金属）。而且，对于 TbIG/Pt 双层，绘制了具有不同角度和辅助磁场大小的电流感应磁化切换的相图。由谐波测量表征的电流感应阻尼类有效场 (HDL) 评估为约 164 Oe/10 8 A cm - 2。通过对 MI 中的磁化切换行为进行全面调查，我们的结果将促进应用基于超低耗散 MI 的自旋电子器件。磁绝缘体 (MI) 因其低吉尔伯特阻尼、长自旋传输长度和无欧姆损耗而备受关注。在这项研究中，具有垂直磁各向异性的高质量 TbIG 薄膜在 GGG (111) 衬底上外延生长。在 TbIG/Pt 双层中，发现矫顽力的角度依赖性服从康多斯基模型，表明磁畴成核和膨胀的磁化反转机制。自旋霍尔磁阻 (SMR) 的横向分量类似于铁磁金属中的平面霍尔电阻，被发现比 SMR 引起的异常霍尔电阻（类似于铁磁金属中的异常霍尔电阻）大七倍左右。金属）。此外，还为 TbIG/Pt 双层绘制了不同角度和辅助磁场大小的电流感应磁化切换的相图。电流诱导的类阻尼有效场 (HDL) 的特点是... 自旋霍尔磁阻 (SMR) 的横向分量类似于铁磁金属中的平面霍尔电阻，被发现比 SMR 引起的异常霍尔电阻（类似于铁磁金属中的异常霍尔电阻）大七倍左右。金属）。此外，还为 TbIG/Pt 双层绘制了具有不同角度和辅助磁场大小的电流感应磁化切换的相图。电流诱导的类阻尼有效场 (HDL) 的特点是... 自旋霍尔磁阻 (SMR) 的横向分量类似于铁磁金属中的平面霍尔电阻，被发现比 SMR 引起的异常霍尔电阻（类似于铁磁金属中的异常霍尔电阻）大七倍左右。金属）。此外，还为 TbIG/Pt 双层绘制了不同角度和辅助磁场大小的电流感应磁化切换的相图。电流诱导的类阻尼有效场 (HDL) 的特点是... 对于 TbIG/Pt 双层，绘制了具有不同角度和辅助磁场大小的电流感应磁化切换的相图。电流诱导的类阻尼有效场 (HDL) 的特点是... 对于 TbIG/Pt 双层，绘制了具有不同角度和辅助磁场大小的电流感应磁化切换的相图。电流诱导的类阻尼有效场 (HDL) 的特点是...