We report the direct measurement of record fast switching speeds in GaN/AlN resonant tunneling diodes (RTDs). The devices, grown by plasma-assisted molecular-beam epitaxy, displayed three repeatable negative differential resistance (NDR) regions below a bias of +6 V. A room temperature peak-to-valley current ratio (PVCR) > 2 was observed, which represents a marked improvement over recent reports. Measurements carried out on hundreds of devices, of varying sizes, revealed a yield of ∼90%. Repeatability measurements consisting of 3000 sweeps resulted in a standard deviation, relative to the mean, of < 0.1%. Temperature dependent measurements combined with non-equilibrium Green's function based quantum transport simulations suggest the presence of both three-dimensional (3D) and two-dimensional (2D) emitters, giving rise to three NDR regions. Finally, a valley current density vs perimeter-to-area-ratio study indicates the presence of a surface leakage current mechanism, which reduces the PVCR.

中文翻译：

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GaN 基谐振隧道二极管具有出色的生长、良率、可重复性和开关性能

我们报告了 GaN/AlN 谐振隧道二极管 (RTD) 中创纪录的快速开关速度的直接测量。通过等离子体辅助分子束外延生长的器件显示出三个可重复的负微分电阻 (NDR) 区域低于 +6 V 的偏压。观察到室温峰谷电流比 (PVCR) > 2，其中与最近的报告相比有了显着的改进。在数百个不同尺寸的设备上进行的测量显示，产量约为 90%。由 3000 次扫描组成的重复性测量导致相对于平均值的标准偏差 < 0.1%。温度相关测量与基于非平衡格林函数的量子传输模拟相结合，表明存在三维 (3D) 和二维 (2D) 发射体，产生三个 NDR 地区。最后，谷值电流密度与周长与面积比的研究表明存在表面漏电流机制，这会降低 PVCR。