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Phonons and excitons in ZrSe2–ZrS2 alloys
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-03-19 , DOI: 10.1039/d0tc00731e
Sean M. Oliver 1, 2, 3, 4, 5 , Joshua J. Fox 4, 6, 7, 8, 9 , Arsalan Hashemi 10, 11, 12, 13 , Akshay Singh 4, 14, 15, 16, 17 , Randal L. Cavalero 4, 6, 7, 8, 9 , Sam Yee 1, 2, 3, 4, 5 , David W. Snyder 4, 6, 7, 8, 9 , R. Jaramillo 4, 14, 15, 16 , Hannu-Pekka Komsa 10, 11, 12, 13, 18 , Patrick M. Vora 1, 2, 3, 4, 5
Affiliation  

Zirconium disulfide (ZrS2) and zirconium diselenide (ZrSe2) are promising materials for future optoelectronics due to indirect band gaps in the visible and near-infrared (NIR) spectral regions. Alloying these materials to produce ZrSxSe2−x (x = 0…2) would provide continuous control over key optical and electronic parameters required for device engineering. Here, we present a comprehensive analysis of the phonons and excitons in ZrSxSe2−x using low-temperature Raman spectroscopy and room-temperature spectroscopic ellipsometry (SE) measurements. We extract the Raman-active vibrational mode frequencies and find that they compare favorably with density functional theory (DFT) calculations. Our simulations and polarization-resolved measurements demonstrate that substitutional doping renders infrared (IR) modes to be Raman-active. This leads to a Raman spectrum dominated by nominally IR phonons, a phenomenon that originates from the large ionicity of the ZrSxSe2−x bonds. SE measurements of the complex refractive index quantify the blue-shift of direct, allowed exciton transitions with increasing S content, and we find strong light–matter interactions with low optical loss in the NIR. Correlating these data with DFT allows for an estimation of the Γ-point exciton binding energy at room temperature. This study illustrates the large effects of alloying on ZrSxSe2−x and lays the foundation for future applications of this material.

中文翻译:

ZrSe2-ZrS2合金中的声子和激子

由于二硫化锆(ZrS 2)和二硒化锆(ZrSe 2)在可见光和近红外(NIR)光谱区域中存在间接带隙,因此是未来光电子学的有前途的材料。将这些材料合金化以产生ZrS x Se 2- xx = 0…2)将提供对器件工程所需的关键光学和电子参数的连续控制。在这里,我们对ZrS x Se 2− x中的声子和激子进行全面分析使用低温拉曼光谱和室温光谱椭偏(SE)测量。我们提取了拉曼主动振动模式频率,发现它们与密度泛函理论(DFT)计算具有可比性。我们的仿真和偏振分辨测量结果表明,替代掺杂使红外(IR)模式具有拉曼活性。这会导致名义上的IR声子占主导的拉曼光谱,这种现象源自ZrS x Se 2- x的大电离性债券。SE对复数折射率的测量量化了随着S含量的增加,直接的,允许的激子跃迁的蓝移,并且在NIR中我们发现强的光-物质相互作用和低的光损耗。将这些数据与DFT进行关联可以估算室温下的Γ点激子结合能。这项研究说明了合金化对ZrS x Se 2- x的巨大影响,并为该材料的未来应用奠定了基础。
更新日期:2020-03-19
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