In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are simultaneously controlled by lateral in-plane gates formed with the same multi-2DEG stack. The multi-channel heterostructure allows to increase carrier density in the channel while keeping high electron mobility. Besides, the in-plane gate geometry provides an effective control of multiple channels with a smaller intrinsic gate capacitance. As compared to single-channel IPGFETs, multi-channel structure resulted in a three-time enhancement in current density and transconductance, offering opportunities for efficient scaling up of in-plane gate devices. High current density of 4.35 A/mm along with 2.05 S/mm transconductance are achieved in an optimized device. The effective control of the multiple high-mobility channels along with the reduced intrinsic capacitance of the in-plane gate open a pathway for new device concepts.

中文翻译：

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多通道 AlGaN/GaN 面内栅极场效应晶体管

在这封信中，我们介绍了一种多通道平面内栅极场效应晶体管 (MC-IPGFET)。在所提出的器件中，多个垂直堆叠的二维电子气 (2DEG) 由同一多 2DEG 堆叠形成的横向面内栅极同时控制。多通道异质结构允许增加通道中的载流子密度，同时保持高电子迁移率。此外，面内栅极几何结构提供了对具有较小本征栅极电容的多个通道的有效控制。与单通道 IPGFET 相比，多通道结构使电流密度和跨导提高了三倍，为有效扩大面内栅极器件提供了机会。在优化的器件中实现了 4.35 A/mm 的高电流密度和 2.05 S/mm 的跨导。