In this work, we have demonstrated normally-off $\beta {-}\text {Ga}_{{2}}\text {O}_{{3}}$ metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/mm were achieved in Depletion (D–) and Enhancement (E–) mode device, respectively, which shows negligible current reduction. Steep subthreshold swing (SS) of 72 mV/dec and breakdown voltage of 670 V were also obtained in the E-mode MOSFET. Furthermore, after gate stess test of 10 V for 10⁵ s was performed, the threshold voltage $({V}_{\textit {TH}})$ shift was 26.5 %. These electrical characteristics of the E-mode $\beta {-}\text {Ga}_{{2}}\text {O}_{{3}}$ MOSFET shows the great potential for future power switch application.

中文翻译：

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具有铁电荷存储栅堆叠结构的常关 β-Ga2O3 功率 MOSFET

在这项工作中，我们已经证明了常关 $\beta {-}\text {Ga}_{{2}}\text {O}_{{3}}$ 具有铁电电荷存储栅堆叠结构的金属氧化物半导体场效应晶体管 (MOSFET)。在耗尽 (D–) 和增强 (E–) 模式器件中分别实现了 18.3 和 16.0 mA/mm 的饱和电流，显示出的电流降低可以忽略不计。在 E 模式 MOSFET 中还获得了 72 mV/dec 的陡峭亚阈值摆幅 (SS) 和 670 V 的击穿电压。此外，在进行 10 V 10 ⁵ s 的栅极应力测试后，阈值电压 $({V}_{\textit {TH}})$ 变化为 26.5%。E 模式的这些电气特性 $\beta {-}\text {Ga}_{{2}}\text {O}_{{3}}$ MOSFET 显示出未来功率开关应用的巨大潜力。