A 700-V normally-off ${p}$ -GaN gate power transistor with distributed built-in Schottky barrier diode (SBD) is demonstrated in this work. The transistor cell and diode cell are alternately arrayed along the device width and are locally isolated using ion implantations. The built-in SBD provides a low reverse turn-on voltage which is independent of the threshold voltage and gate bias of the transistor. Compared to the two-device scheme consisting of an anti-parallel ${p}$ -GaN gate HEMT/SBD pair, the proposed transistor exploits the common access region in both forward conduction and reverse conduction, thus a significant reduction in chip area is obtained.

中文翻译：

---

具有分布式内置肖特基势垒二极管的 p-GaN 栅极功率晶体管，用于低损耗反向传导

一个 700-V 常断 ${p}$ 在这项工作中展示了具有分布式内置肖特基势垒二极管 (SBD) 的 -GaN 栅极功率晶体管。晶体管单元和二极管单元沿器件宽度交替排列，并使用离子注入进行局部隔离。内置 SBD 提供低反向导通电压，该电压与晶体管的阈值电压和栅极偏置无关。与由反并联组成的双设备方案相比 ${p}$ -GaN 栅极 HEMT/SBD 对，所提出的晶体管在正向传导和反向传导中都利用了公共存取区，从而获得了芯片面积的显着减少。