This work experimentally demonstrates the memory operations of a $\text{Z}^{{2}}$ -FET (Zero impact ionization, Zero subthreshold swing) matrix without the use of selectors. Selection and deselection of memory cells in the same bit line can be controlled by modulating the front-gate voltage to prevent the use of a dedicated selector. Appropriate drain voltages to achieve two logic states need to be chosen according to the memory window when the cells are selected. 2D TCAD simulations reveal that the ‘1’-state current of a deselected cell remains as low as that of the ‘0’-state since the deselection gate voltage induces higher potential barriers that block the carrier injections from the source and drain. The power consumption for writing and reading the ‘0’-state are nearly identical for cells with and without selectors. However, at fixed bit line current, the power consumption in any writing and reading is slightly higher with selectors due to their voltage drop.

中文翻译：

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零冲击电离、零亚阈值摆幅 FET 矩阵的内存操作，无需选择器

这项工作通过实验演示了 $\text{Z}^{{2}}$ -FET（零碰撞电离，零亚阈值摆动）矩阵的内存操作，而无需使用选择器。可以通过调制前栅极电压来控制同一位线中存储单元的选择和取消选择，以防止使用专用选择器。在选择单元时，需要根据存储窗口选择适当的漏极电压以实现两个逻辑状态。2D TCAD 模拟显示，取消选择的单元的“1”状态电流保持与“0”状态一样低，因为取消选择栅极电压会引起更高的势垒，阻止载流子从源极和漏极注入。对于带有和不带有选择器的单元，写入和读取“0”状态的功耗几乎相同。然而，