This paper investigates the impact of the random ferroelectric-dielectric (FE-DE) phase distribution on the memory window (MW) of the ferroelectric field-effect transistor (FeFET) nonvolatile memory (NVM) with the aid of TCAD atomistic simulations. Our study indicates that the DE path from source to drain is detrimental to the MW, and down-scaling the gate length substantially increases the probability of forming DE path and the variability in the MW. In addition, the MW variability for scaled FeFET devices can be mitigated by reducing the grain size, even under the same grain-to-channel area ratio. Besides, when down-scaling the insulator thickness to increase the MW, the increased MW variability due to the random FE-DE grains needs to be considered. Our study may provide insights for future scaling of FeFET NVMs.

中文翻译：

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考虑随机铁电介质相位分布的铁电 FET 非易失性存储器的可变性分析

本文借助 TCAD 原子模拟研究了随机铁电介质 (FE-DE) 相位分布对铁电场效应晶体管 (FeFET) 非易失性存储器 (NVM) 的存储器窗口 (MW) 的影响。我们的研究表明，从源极到漏极的 DE 路径对 MW 有害，并且缩小栅极长度会大大增加形成 DE 路径的可能性和 MW 的可变性。此外，即使在相同的晶粒与沟道面积比下，也可以通过减小晶粒尺寸来减轻缩放 FeFET 器件的 MW 可变性。此外，当缩小绝缘体厚度以增加 MW 时，需要考虑由于随机 FE-DE 晶粒而增加的 MW 变异性。我们的研究可能为 FeFET NVM 的未来扩展提供见解。