A novel quantitative design method is proposed herein for a 120-GHz 8-stage broadband amplifier using the stagger tuning technique. The pole frequencies of the unit amplifiers are determined by the parasitic capacitors and the size of the matching inductors, and resonance peaks are formed at the pole frequency. We proposed the stagger tuning technique at two different frequencies, where an inductance of four stages is chosen to match the pole frequency at a lower frequency (fL) and an inductance of the other four stages is chosen for the upper frequency (fH). With this technique, the maximum bandwidth can be achieved with the given amplifier gain. Moreover, it was shown that the amplifier designed with stagger tuning at two different frequencies yielded the lowest noise figure in the target band because the gain was concentrated in the target band. A 120-GHz 8-stage amplifier is designed with the proposed technique and fabricated using 40-nm CMOS technology. The measured peak gain of the amplifier is 20.6 dB, and the 3-dB bandwidth is 40.6 GHz while consuming 45-mW of dc power.

中文翻译：

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采用定量交错调谐技术的 120GHz 8 级宽带放大器

本文提出了一种使用交错调谐技术的 120 GHz 8 级宽带放大器的新型定量设计方法。单元放大器的极点频率由寄生电容和匹配电感的大小决定，在极点频率处形成谐振峰。我们提出了两种不同频率的交错调谐技术，其中选择四级电感以匹配较低频率 (fL) 的极点频率，并选择其他四级电感用于较高频率 (fH)。使用这种技术，可以在给定的放大器增益下实现最大带宽。此外，结果表明，在两个不同频率上交错调谐设计的放大器在目标频带中产生最低的噪声系数，因为增益集中在目标频带中。120 GHz 8 级放大器采用所提出的技术设计，并使用 40 纳米 CMOS 技术制造。测得的放大器峰值增益为 20.6 dB，3-dB 带宽为 40.6 GHz，同时消耗 45-mW 直流功率。