In this study, the simple and rapid formation of porous silicon on a pillar array structure using inductively coupled plasma reactive ion etching (ICP-RIE) is realized. This method can render the outermost surface porous without using an additional etching or deposition apparatus because the same equipment is used to form the structure. As a basic experiment, we attempted to etch the structure by considerably varying three parameters (bias power, chamber pressure, and gas flow rate) in ICP-RIE. The etching step condition was determined for the porous structure from the result. Furthermore, we obtained a porous pillar surface while almost maintaining the structure by performing multicycle etching and an additional passivation step. A number of pores (diameter: ~100 nm) were formed randomly on the side wall of the pillar array using the proposed method. Compared with original pillar, the surface roughness of porous pillar increased by 48%. [2019-0216]

中文翻译：

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使用电感耦合等离子体反应离子蚀刻的多孔硅表面的简单和快速制造工艺

在这项研究中，实现了使用电感耦合等离子体反应离子蚀刻（ICP-RIE）在柱状阵列结构上简单快速地形成多孔硅。由于使用相同的设备来形成结构，因此该方法可以在不使用额外蚀刻或沉积设备的情况下使最外表面多孔。作为一项基本实验，我们尝试通过显着改变 ICP-RIE 中的三个参数（偏置功率、腔室压力和气体流速）来蚀刻结构。根据结果​​确定多孔结构的蚀刻步骤条件。此外，通过执行多循环蚀刻和额外的钝化步骤，我们获得了多孔柱表面，同时几乎保持了结构。孔数（直径：~100 nm) 使用所提出的方法在柱阵列的侧壁上随机形成。与原柱相比，多孔柱的表面粗糙度提高了48%。[2019-0216]