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The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures
IEEE Design & Test ( IF 1.9 ) Pub Date : 2019-10-03 , DOI: 10.1109/mdat.2019.2944094
Xiaoming Chen , Xiaoyu Sun , Panni Wang , Suman Datta , Xiaobo Sharon Hu , Xunzhao Yin , Matthew Jerry , Shimeng Yu , Ann Franchesca Laguna , Kai Ni , Michael T. Niemier , Dayane Reis

Editor's note: Semiconductor industry is steadily on the quest for emerging devices and device technologies that lead to higher performance and higher efficiency of computing over CMOS technology. This tutorial introduces the potential of emerging devices that integrate ferroelectric material into digital as well as analog circuits. With a focus on FeFET technology, the authors first present device characteristics, and advantages in comparison to CMOS but also other emerging technologies such as RRAM. The article comprehensively demonstrates the use of FeFET technology in circuits, architectures, and applications.

中文翻译:

铁电FET对数字和模拟电路与架构的影响

编者注:半导体行业一直在寻求新兴的设备和设备技术,以实现比CMOS技术更高的性能和更高的计算效率。本教程介绍了将铁电材料集成到数字电路和模拟电路中的新兴设备的潜力。作者主要关注FeFET技术,首先介绍了器件的特性,与CMOS以及其他新兴技术(例如RRAM)相比的优势。本文全面演示了FeFET技术在电路,架构和应用中的使用。
更新日期:2020-04-21
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