Gallium nitride (GaN) high electron mobility transistor (HEMT) has a lateral device structure with wafer-level packaging, which is advantageous in minimizing parasitic parameters and overall device size. This type of packaging also has better thermal performance than conventional packaging due to low junction-to-bottom thermal resistances. It indicates copper layers in printed circuit boards can effectively serve as heat dissipation channels for the switching devices. When these copper traces and pours in the vicinity of the switching devices are carefully designed and shaped, they can also be utilized as an integrated output filter. In this article, a synchronous buck converter with a single-turn air-core integrated planar inductor is proposed to achieve both zero-voltage switching and high thermal performance of the GaN HEMTs. A new planar inductor design flowchart is introduced, and analytically estimated inductance and resistance are verified with simulation and experiment. Three different inductors are designed and fabricated to prove the improved thermal performance of the proposed converters.

中文翻译：

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单匝空心集成平面电感器的设计，以提高基于 GaN HEMT 的同步降压转换器的热性能

氮化镓 (GaN) 高电子迁移率晶体管 (HEMT) 具有晶圆级封装的横向器件结构，这有利于最大限度地减少寄生参数和整体器件尺寸。由于低结到底部的热阻，这种类型的封装还具有比传统封装更好的热性能。这表明印刷电路板中的铜层可以有效地作为开关器件的散热通道。当开关器件附近的这些铜迹线和浇注经过精心设计和成形时，它们也可以用作集成输出滤波器。在本文中，提出了一种具有单匝空心集成平面电感器的同步降压转换器，以实现 GaN HEMT 的零电压开关和高热性能。介绍了一种新的平面电感设计流程图，并通过仿真和实验验证了分析估计的电感和电阻。设计和制造了三种不同的电感器，以证明所提出的转换器的热性能得到改善。