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Influence of Interfacial Oxides at TCO/Doped Si Thin Film Contacts on the Charge Carrier Transport of Passivating Contacts
IEEE Journal of Photovoltaics ( IF 3 ) Pub Date : 2020-03-01 , DOI: 10.1109/jphotov.2019.2957672
Christoph Messmer 1 , Martin Bivour 1 , Christoph Luderer 1 , Leonard Tutsch 1 , Jonas Schon 1 , Martin Hermle 1
Affiliation  

Minimizing transport losses in novel solar cell concepts is often linked to improvements at the transparent conductive oxide (TCO)/doped silicon contact. A detailed understanding of the determining factors for an efficient transport at this heterojunction is essential, such as work function matching and efficient tunneling transport. In this article, we analyze the different TCO contact parameters experimentally and by numerical device simulations. We show that work function matching by using a proper interlayer [e.g., tungsten oxide (WOx)] can be an effective means to improve the fill factor of silicon heterojunction solar cells. However, we showcase that an improved work function matching achieved by changing the doping of a TCO interlayer can be superimposed by a less efficient tunneling transport, for e.g., due to an interfacial oxide. Furthermore, we show that for n-tunnel oxide passivating contacts, an unintentionally grown oxide at the TCO/poly-Si contact could be a possible explanation for recently observed transport losses.

中文翻译:

TCO/掺杂硅薄膜触点界面氧化物对钝化触点电荷载体传输的影响

最大限度地减少新型太阳能电池概念中的传输损耗通常与透明导电氧化物 (TCO)/掺杂硅接触的改进有关。详细了解该异质结处有效传输的决定因素至关重要,例如功函数匹配和有效隧道传输。在本文中,我们通过实验和数值设备模拟分析了不同的 TCO 接触参数。我们表明,通过使用适当的中间层 [例如氧化钨 (WOx)] 进行功函数匹配可以是提高硅异质结太阳能电池填充因子的有效手段。然而,我们展示了通过改变 TCO 夹层的掺杂实现的改进的功函数匹配可以与效率较低的隧道传输叠加,例如,由于界面氧化物。
更新日期:2020-03-01
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