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Effective Additive-Free Acidic-Solution Texturing for Surface-Damage-Free Kerfless Silicon Wafers
IEEE Journal of Photovoltaics ( IF 2.5 ) Pub Date : 2020-01-27 , DOI: 10.1109/jphotov.2019.2963573
Yujin Jung , Soohyun Bae , Hae-Seok Lee , Yoonmook Kang , Donghwan Kim

Crystalline solar cells have attracted significant attention in the solar-cell market owing to their low material cost. Multicrystalline silicon (mc-Si) is usually fabricated using the casting method, and approximately 35% of Si is removed as kerf in the sawing process performed to fabricate the wafer. The fabrication of kerfless mc-Si wafers does not involve the sawing and growing process. Hence, there is a significant reduction in the process cost (~50%), while saving ~66% energy in wafer manufacturing. Moreover, the absence of sawing process will result in no surface damage and smoother surfaces. Texturing using conventional methods such as acidic chemical etching are ineffective and as a result, the desired surface texture cannot be obtained. To solve this problem, the texture can be created using relatively expensive and complicated processes such as reactive-ion etching or metal-catalyzed chemical etching, which are not affected by the shape of the wafer surface. This article proposes a method for creating an effective texture that can increase the light absorptivity of mc-Si wafers manufactured by the kerfless method with no surface damage. This technology is a cost-effective and reliable process that uses an acidic chemical solution with no additive or mask. The etching rate and texture shape are investigated for different solution ratios of HF and HNO 3 . The surface morphology is examined using scanning electron microscopy, and the reflectance at 300-1200 nm is measured using ultraviolet-visible spectroscopy. A weighted average reflectance of ~20.0% is obtained, which reduces to ~7.4% on depositing an antireflective film.

中文翻译:


有效的无添加剂酸性溶液制绒,可实现表面无损伤的无切口硅片



晶体太阳能电池由于其较低的材料成本而在太阳能电池市场引起了广泛关注。多晶硅 (mc-Si) 通常采用铸造法制造,在制造晶圆的锯切过程中,大约 35% 的 Si 作为切口被去除。无切口多晶硅晶圆的制造不涉及切割和生长过程。因此,工艺成本显着降低(~50%),同时在晶圆制造过程中节省~66%的能源。而且,由于没有锯切过程,不会造成表面损伤,表面更光滑。使用酸性化学蚀刻等传统方法进行纹理化效果不佳,因此无法获得所需的表面纹理。为了解决这个问题,可以使用相对昂贵且复杂的工艺(例如反应离子蚀刻或金属催化化学蚀刻)来创建纹理,这些工艺不受晶圆表面形状的影响。本文提出了一种创建有效织构的方法,该织构可以提高无切口方法制造的多晶硅晶圆的光吸收率,且不会造成表面损伤。该技术是一种经济有效且可靠的工艺,使用酸性化学溶液,不含添加剂或掩模。研究了HF和HNO 3 不同溶液比例的蚀刻速率和织构形状。使用扫描电子显微镜检查表面形貌,并使用紫外-可见光谱测量300-1200 nm处的反射率。获得约 20.0% 的加权平均反射率,沉积抗反射膜后降至约 7.4%。
更新日期:2020-01-27
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