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Impact of Postplating Annealing on Defect Activation in Boron-Doped PERC Solar Cells
IEEE Journal of Photovoltaics ( IF 2.5 ) Pub Date : 2020-03-01 , DOI: 10.1109/jphotov.2020.2968110
Benjamin Grubel 1 , Georg Christopher Theil 1 , Sebastian Roder 1 , Tim Niewelt 1 , Sven Kluska 1
Affiliation  

In this article, the impact of postplating annealing on the regenerated state of boron-doped p-type passivated emitter and rear cell (PERC) solar cells with plated Ni/Cu/Ag front-side contacts is characterized. The assessment of different plating annealing profiles in the temperature range of 200–300 °C and their impact on light-induced degradation as well as on additional defects are realized by lifetime measurements of nonmetallized solar cell precursors before and after annealing. An observed lifetime degradation indicates that the current process sequence might facilitate bulk defect activation. An alternative process sequence is tested and promising results are presented.

中文翻译:

镀后退火对掺硼PERC太阳能电池缺陷活化的影响

在本文中,描述了镀后退火对具有镀镍/铜/银正面触点的掺硼 p 型钝化发射极和后电池 (PERC) 太阳能电池再生状态的影响。通过在退火前后对非金属化太阳能电池前驱体进行寿命测量,可以评估 200-300 °C 温度范围内的不同电镀退火曲线及其对光诱导降解和其他缺陷的影响。观察到的寿命退化表明当前的工艺顺序可能促进体缺陷激活。测试了另一种工艺顺序,并展示了有希望的结果。
更新日期:2020-03-01
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