This article investigates the influence of crystallographic defects on the temperature sensitivity of multicrystalline silicon wafers. The thermal characteristics of the implied open-circuit voltage is assessed since it determines most of the total temperature sensitivity of the material. Spatially resolved temperature-dependent analysis is performed on wafers from various brick positions; intragrain regions, grain boundaries, and dislocation clusters are examined. The crystal regions are studied before and after subjecting the wafers to phosphorus gettering, aiming to alter the metallic impurity concentration in various regions across the wafers. Most intragrain regions and grain boundaries are found to show similar thermal characteristics before gettering. The gettering process has no substantial effect on the temperature sensitivity of intragrain regions, whereas it increases the sensitivity of most grain boundaries. Dislocation clusters exhibit both highest and lowest temperature sensitivities compared with other crystal regions before and after gettering. Images of the recombination parameter γ are created and related to the temperature sensitivity of the Shockley–Read–Hall (SRH) lifetime of the impurities in the material. The results suggest that most intragrain regions and grain boundaries are limited by SRH centers with a modest lifetime temperature sensitivity in the studied temperature range. Dislocation clusters are found to contain recombination centers with an effective lifetime that has a beneficial temperature sensitivity. The gettering process is observed to alter the composition of the recombination centers in the dislocation clusters, resulting in an SRH lifetime with an even more favorable temperature sensitivity for most clusters.

中文翻译：

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多晶硅片中晶体缺陷的温度系数

本文研究了晶体缺陷对多晶硅片温度敏感性的影响。评估隐含开路电压的热特性，因为它决定了材料的大部分总温度敏感性。对来自不同砖块位置的晶片进行空间分辨温度相关分析；检查了晶内区域、晶界和位错簇。在对晶片进行磷吸收之前和之后对晶体区域进行研究，旨在改变晶片上不同区域的金属杂质浓度。发现大多数晶内区域和晶界在吸气前表现出相似的热特性。吸气过程对晶内区域的温度敏感性没有实质性影响，但它增加了大多数晶界的敏感性。与吸气前后的其他晶体区域相比，位错簇表现出最高和最低的温度敏感性。重组参数 γ 的图像被创建并与材料中杂质的肖克利-雷德-霍尔 (SRH) 寿命的温度敏感性相关。结果表明，在所研究的温度范围内，大多数晶内区域和晶界受到 SRH 中心的限制，其寿命温度敏感性适中。发现位错簇包含复合中心，其有效寿命具有有益的温度敏感性。