Silicon nanowires (SiNWs) are promising structures with excellent photovoltaic properties for low-cost, high-efficiency solar cells and have the potential to overcome the limits of bulk silicon solar cells. There is still a need to enhance light absorption in SiNWs without increasing the surface area. Here, we introduce a novel design, hourglass-shaped silicon nanowire (HG-SiNW) to significantly increase the light-trapping path. Electrical and optical measurements show the superiority of HG-SiNW as an antireflective layer. In addition, whispering gallery mode identified by optical simulations accounts for the greatly improved absorption at the broadband solar spectrum. The HG-SiNW solar cells show an increase in short-circuit current (JSC) and 1.85 times higher efficiency with only simple diameter variations.

中文翻译：

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使用沙漏形硅纳米线增加光捕获路径的太阳能电池

硅纳米线（SiNWs）是一种很有前途的结构，具有用于低成本、高效率太阳能电池的优异光伏特性，并有可能克服体硅太阳能电池的局限性。仍然需要在不增加表面积的情况下增强 SiNW 中的光吸收。在这里，我们介绍了一种新颖的设计，沙漏形硅纳米线 (HG-SiNW) 以显着增加光捕获路径。电学和光学测量表明 HG-SiNW 作为抗反射层的优越性。此外，通过光学模拟确定的回音壁模式可以解释宽带太阳光谱吸收率的大幅提高。HG-SiNW 太阳能电池显示短路电流 (JSC) 增加，效率提高 1.85 倍，仅具有简单的直径变化。