Impacts of reactor pressure and growth temperature on the qualities and properties of InGaP epitaxial layers grown in a narrow-channel horizontal metalorganic vapor-phase epitaxy (MOVPE) reactor were investigated with a growth rate of 10 μm/h. The roughness of InGaP was improved remarkably when the pressure was increased from 6 to 10 and 15 kPa. The reason is most likely related to the absolute pressure of P and the migrations of In and Ga adatoms on the wafer surface. Owing to the gas-phase reactions and desorption of P from InGaP, the surface of InGaP became rough, and the pit dislocation was increased with an increase in growth temperature. Although a low temperature was beneficial in order to obtain a smooth InGaP surface, the carrier lifetime in InGaP was shortened as a drawback. Consequently, InGaP n-on-p solar cells grown at a low temperature suffered from the degradations of both short-circuit current density and open-circuit voltage. Background impurities and defect densities in low temperature grown InGaP were attributed to these deteriorations. At the optimized growth temperature of 650 °C and the reactor pressure of 15 kPa, the growth rate of InGaP was accelerated to 20 and 30 μm/h. InGaP solar cells were successfully fabricated with the rate of 30 μm/h that opened up the way for the fabrication of III–V multijunction solar cells in the high-speed MOVPE reactor.

中文翻译：

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InGaP 太阳能电池的高速 MOVPE 生长

研究了反应器压力和生长温度对在窄通道水平金属有机气相外延 (MOVPE) 反应器中生长的 InGaP 外延层质量和性能的影响，生长速率为 10 μm/h。当压力从 6 kPa 增加到 10 kPa 和 15 kPa 时，InGaP 的粗糙度得到显着改善。原因很可能与 P 的绝对压力和晶圆表面上 In 和 Ga 吸附原子的迁移有关。由于 InGaP 中 P 的气相反应和解吸，InGaP 表面变得粗糙，并且随着生长温度的升高，凹坑位错增加。虽然低温有利于获得光滑的 InGaP 表面，但 InGaP 中的载流子寿命缩短是一个缺点。最后，在低温下生长的 InGaP n-on-p 太阳能电池遭受短路电流密度和开路电压的降低。低温生长的 InGaP 中的背景杂质和缺陷密度归因于这些劣化。在 650 °C 的优化生长温度和 15 kPa 的反应器压力下，InGaP 的生长速率加速到 20 和 30 μm/h。InGaP 太阳能电池以 30 μm/h 的速率成功制造，为在高速 MOVPE 反应器中制造 III-V 多结太阳能电池开辟了道路。在 650 °C 的优化生长温度和 15 kPa 的反应器压力下，InGaP 的生长速率加速到 20 和 30 μm/h。InGaP 太阳能电池以 30 μm/h 的速率成功制造，为在高速 MOVPE 反应器中制造 III-V 多结太阳能电池开辟了道路。在 650 °C 的优化生长温度和 15 kPa 的反应器压力下，InGaP 的生长速率加速到 20 和 30 μm/h。InGaP 太阳能电池以 30 μm/h 的速率成功制造，为在高速 MOVPE 反应器中制造 III-V 多结太阳能电池开辟了道路。