Electroluminescence (EL) characterization technique is used to quantify recombination properties in back junction silicon (Si) heterojunction (HJ) solar cell test structures with interdigitated back contact (IBC) emitters and metal contacts. These test structures are three terminal devices that allow the selective biasing and injection of minority carriers into spatially isolated emitter strips having different widths. This allows the study of minority carriers’ current transport, flow, and recombination in these regions, which can, then, be applied to full IBC cells. EL is used to verify that emission is proportional to the minority carriers’ concentration in the corresponding regions of the device, thus providing information relevant to minority carriers’ collection when compared with laser beam induced current technique in considerably less time and with a higher spatial resolution. Current transport through the inversion layer that occurs due to the band bending at the n crystalline Si and p amorphous Si interface is discussed relying on the distance that minority carriers travel in different configurations and on their diffusion length. Laser defect spots (LDS) were, then, introduced in the emitter regions to analyze the spatial profile of minority carriers as they recombine at the LDS due to their high surface recombination velocity. Ideality factors in different configurations are spatially mapped from EL before and after introducing LDS and are used to show the effect of the inversion layer on the different recombination mechanisms. Current transport through the inversion layer is studied at different biasing conditions and correlated with current transport after LDS.

中文翻译：

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背结硅异质结测试结构中复合的电致发光表征：反转层的作用

电致发光 (EL) 表征技术用于量化背结硅 (Si) 异质结 (HJ) 太阳能电池测试结构中的复合特性，该测试结构具有叉指背接触 (IBC) 发射极和金属接触。这些测试结构是三端器件，允许选择性偏置和将少数载流子注入具有不同宽度的空间隔离发射极条。这允许研究这些区域中少数载流子的电流传输、流动和重组，然后可以应用于完整的 IBC 电池。EL 用于验证发射与器件相应区域中的少数载流子浓度成正比，因此，与激光束感应电流技术相比，可以在更短的时间内以更高的空间分辨率提供与少数载流子收集相关的信息。由于在 n 晶硅和 p 非晶硅界面处的能带弯曲而发生的通过反转层的电流传输依赖于少数载流子在不同配置中行进的距离及其扩散长度进行了讨论。然后，将激光缺陷点 (LDS) 引入发射区，以分析少数载流子由于其高表面复合速度而在 LDS 复合时的空间分布。不同配置的理想因子在引入 LDS 之前和之后从 EL 进行空间映射，用于显示反转层对不同重组机制的影响。