Boron nitride nanowires (BNNWs) with high purity and a long-straight fashion are synthesized via ball milling and annealing technique at 1150°C successfully. These nanowires have an average length of more than $50\mu \text{m}$ with diameter 100 nm. The results of characterization showed that the main elements of the nanowires are boron and nitrogen, which molar ratio of B:N is close to 1 indicating the BN structure. The electrical properties of an individual BNNW were studied for the first time. The resistivity, carrier concentration, and carrier mobility of raw BNNWs were drawn from the experimental I-V curves. In addition, extremely stretchable BNNW networks two-terminal devices were fabricated on flexible and transparent elastomeric substrates. The electrical and mechanical properties of these devices were firstly investigated by bending tests. The as synthesized products were utilized as sensing material to detect strain and humidity. Results show that their electrical resistance increased with bending and humidity, proving the feasibility of the wearable human-friendly strain sensor and humidity sensing system. Our results indicate that BNNW networks are potential wearable sensor or medical integration of electronic implants.

中文翻译：

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纯长直氮化硼纳米线应变的有效生长及其作为柔性湿度传感器的应用

通过球磨和1150°C退火技术成功合成了具有高纯度和长直型的氮化硼纳米线（BNNW）。这些纳米线的平均长度超过 $50\mu\text{m}$，直径为 100 nm。表征结果表明，纳米线的主要元素是硼和氮，B:N的摩尔比接近1，表明是BN结构。首次研究了单个 BNNW 的电气特性。原始 BNNW 的电阻率、载流子浓度和载流子迁移率来自实验 IV 曲线。此外，在柔性和透明的弹性体基板上制造了极其可拉伸的 BNNW 网络两端设备。首先通过弯曲试验研究了这些器件的电气和机械性能。合成的产物用作传感材料来检测应变和湿度。结果表明，它们的电阻随着弯曲和湿度的增加而增加，证明了可穿戴人性化应变传感器和湿度传感系统的可行性。我们的结果表明 BNNW 网络是潜在的可穿戴传感器或电子植入物的医疗集成。