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Effects of interfacial layers on magnetization dynamics of [Fe75Co20Cu5/Cu(x)]30 multilayer nanowires
IEEE Transactions on Magnetics ( IF 2.1 ) Pub Date : 2020-04-01 , DOI: 10.1109/tmag.2019.2962033
Shehreen Aslam , Manoj Khanna , Bijoy Kumar Kuanr

A series of highly ordered multilayer [FeCoCu/Cu(x)]30 ( $0 \le x \le 40$ nm with FeCoCu layer thickness fixed 1000 ± 100 nm) nanowire arrays in alumina membrane (200 nm diameter) was fabricated by electrodeposition from a single electrolytic bath. The body-centered cubic (bcc) phase of FeCoCu-alloy separated by a well-defined face-centered cubic (fcc) phase of Cu spacer is confirmed by high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) analysis. The objective of the present investigation is to tune the magnetic properties through inter- and intra-wire interactions between the FeCoCu layers separated by non-magnetic Cu(x) layers in the multilayer nanowire array. Ferromagnetic resonance (FMR) study was performed in a flip-chip geometry to explore the magnetization dynamics. FMR measurements confirm the decrease of resonance field ( $H_{r}$ ), whereas resonance linewidth ( $\Delta H$ ) and FMR absorption increase with the increase in the Cu layer thickness. It may be argued that through inter-/intra-nanowires interactions, the Landau–Lifshitz–Gilbert damping provides the most physically sensible magnetization relaxation in multi-layered nanowires system. The values of the Gilbert damping parameters (intrinsic and extrinsic), obtained from the FMR linewidth analysis, exhibit a decrease from FeCoCu nanowire to [FeCoCu/Cu(5 nm)] nanowire. With further increase in the Cu thickness, both these parameters were observed to have increased.

中文翻译:

界面层对[Fe 75 Co 20 Cu 5 /Cu(x)] 30多层纳米线磁化动力学的影响

一系列高度有序的多层[FeCoCu/Cu(X)] 30 ( $0 \le x \le 40$ 纳米线,FeCoCu 层厚度固定为 1000 ± 100 nm)氧化铝膜(直径 200 nm)中的纳米线阵列是通过从单个电解槽电沉积制造的。高分辨率透射电子显微镜 (HRTEM) 和 X 射线衍射 (XRD) 证实了 FeCoCu 合金的体心立方 (bcc) 相被 Cu 间隔物的明确面心立方 (fcc) 相隔开分析。本研究的目的是通过由非磁性 Cu 隔开的 FeCoCu 层之间的线间和线内相互作用来调整磁性。X) 多层纳米线阵列中的层。铁磁共振 (FMR) 研究在倒装芯片几何形状中进行,以探索磁化动力学。FMR 测量证实共振场的减少( $H_{r}$ ),而谐振线宽 ( $\Delta H$ ) 和 FMR 吸收随着 Cu 层厚度的增加而增加。可以说,通过纳米线间/纳米线内的相互作用,Landau-Lifshitz-Gilbert 阻尼在多层纳米线系统中提供了物理上最敏感的磁化弛豫。从 FMR 线宽分析获得的 Gilbert 阻尼参数(内在和外在)的值表现出从 FeCoCu 纳米线到 [FeCoCu/Cu(5 nm)] 纳米线的减少。随着铜厚度的进一步增加,观察到这两个参数都增加了。
更新日期:2020-04-01
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