In this article, we provide an accurate method to determine the interlayer resistivity of 2-D layered systems by directly measuring the resistance at a mono- to bi-layer step and feeding the measurement to a distributed resistance model. We take CVD-grown few-layer graphene (up to four layers) with different twist angles ranging from AB-stacked to totally decoupled graphene as an example. Our results show that the interlayer resistivity of AB-stacked CVD grown bilayer graphene (BLG) is in the range of 50-140 Ω.m, which is two to five orders of magnitude greater than the previously reported values for AB-stacked graphite. On the other hand, twisted BLG shows an interlayer resistivity as low as 6 Ω.m and it decreases monotonically with increasing the twist angle, suggesting that interlayer conduction is not limited by phonon scattering, as previously reported. Furthermore, the total resistance of twisted BLG was found to be about one order of magnitude lower than its AB-stacked counterpart, which might lead to lower delay and energy-delay product in twisted graphene interconnects. In addition to that, the universality of our approach allows for accurate determination of interlayer resistivity of other 2-D layered systems such as metal dichalcogenides.

中文翻译：

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使用 MFM 多距离观察和图像处理对热退磁和交流退磁状态下的铁氧体烧结磁体进行磁域分析


在本文中，我们提供了一种准确的方法，通过直接测量单层到双层步骤的电阻并将测量结果输入分布式电阻模型来确定二维层状系统的层间电阻率。我们以 CVD 生长的几层石墨烯（最多四层）为例，其扭转角度从 AB 堆叠到完全解耦的石墨烯不等。我们的结果表明，AB 堆叠的 CVD 生长双层石墨烯 (BLG) 的层间电阻率在 50-140 Ω.m 范围内，比之前报道的 AB 堆叠石墨的值高出两到五个数量级。另一方面，扭曲的 BLG 显示出低至 6 Ω.m 的层间电阻率，并且随着扭曲角度的增加而单调降低，这表明层间传导不受声子散射的限制，如先前报道的那样。此外，扭曲 BLG 的总电阻比 AB 堆叠对应物低约一个数量级，这可能会导致扭曲石墨烯互连中的延迟和能量延迟积降低。除此之外，我们方法的通用性允许准确测定其他二维层状系统（例如金属二硫族化物）的层间电阻率。