The effect of f–d interaction on the current–voltage characteristics of metal–dielectric–metal (MDM) structures consisting of contacting layers of d metals (Fe, Co, Ni) and rare-earth metal (REM) oxides is studied. The f–d exchange interaction between atoms with unfilled f and d electron shells in the thin-film (Fe, Co, Ni)/Tb2O3/(Fe, Co, Ni) MDM structure significantly decreases the potential barrier to transfer of charges between the electrodes. The force and energy of f–d interaction that influence the movement of an electron in the MDM structure have been determined in conditions of the overbarrier charge transfer mechanism. The effect of f–d interaction on the current–voltage characteristics of MDM structures weakens with higher temperature and enhances with stronger magnetic field. This may be associated with the influence of these factors on the ordering of magnetic moments of f and d atoms in the f–d interaction region.

中文翻译：

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F-D 交换相互作用对薄膜 Mdm 结构（M-Fe、Co、Ni；D-Tb2O3）性能的影响

研究了 f-d 相互作用对由 d 金属（Fe、Co、Ni）和稀土金属（REM）氧化物的接触层组成的金属-电介质-金属（MDM）结构的电流-电压特性的影响。薄膜 (Fe, Co, Ni)/Tb2O3/(Fe, Co, Ni) MDM 结构中具有未填充 f 和 d 电子壳层的原子之间的 f-d 交换相互作用显着降低了电荷转移的势垒。电极。影响 MDM 结构中电子运动的 f-d 相互作用的力和能量已在超势垒电荷转移机制的条件下确定。f-d 相互作用对 MDM 结构的电流-电压特性的影响随着温度的升高而减弱，随着磁场的增强而增强。