The electrical properties of two highly absorbing AlN–SiC composites are compared at a frequency of 10.3 GHz. To estimate the dielectric constant and dielectric loss tangent of these highly absorbing materials, the method involving a partially filled waveguide is recommended. The dependence of the electrical properties on the phase composition, the ratio of nonconductive and conductive phases, and the distribution of these phases in the microstructure is established. The composition of samples 1 and 2 is 57.2AlN–37.9SiC–4.9Y 3 Al 5 O 12 and 42.3AlN–49.9SiC–7.8Y 3 Al 5 O 12 . The samples also contain a small amount of titanium carbide, sialon, and other additions. Virtually no solid solutions are found to form between AlN and SiC in the composite crystalline structure. The direct current resistivity of the composites agrees with the results of high-frequency measurements. Samples 1 and 2 are characterized by a dielectric loss tangent of 0.30 and 0.49; the real part of the dielectric constant, ε', is 33.4 and 60.6 and the imaginary part, ε", is 10.1 and 29.5. The resistivity at a voltage of 1 V equals 3.78 ∙ 10 8 Ω ∙ cm for sample 1 and 8.90 · 10 5 Ω ∙ cm for sample 2.

中文翻译：

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AlN-SiC 体系中高吸收陶瓷的电学特性

在 10.3 GHz 的频率下比较了两种高吸收性 AlN-SiC 复合材料的电性能。为了估计这些高吸波材料的介电常数和介电损耗角正切，建议使用部分填充波导的方法。确定了电性能对相组成、非导电相和导电相的比率以及这些相在微观结构中的分布的依赖性。样品 1 和 2 的成分是 57.2AlN–37.9SiC–4.9Y 3 Al 5 O 12 和 42.3AlN–49.9SiC–7.8Y 3 Al 5 O 12 。样品还含有少量碳化钛、赛隆和其他添加剂。在复合晶体结构中，几乎没有发现 AlN 和 SiC 之间形成固溶体。复合材料的直流电阻率与高频测量的结果一致。样品 1 和 2 的特征在于介电损耗角正切为 0.30 和 0.49；介电常数的实部 ε' 为 33.4 和 60.6，虚部 ε" 为 10.1 和 29.5。1 V 电压下的电阻率等于 3.78 ∙ 10 8 Ω ∙ cm 样品 1 和 8.90 ·样品 2 为 10 5 Ω ∙ cm。