The surface preparation is a prerequisite for ensuring the required properties of a diamond film formed by gas-phase deposition. The influence of the temperature and concentration of the CuSO₄ etchant on the structural and phase compositions of the surface of hard-alloy materials is considered in this work, and the structural and phase compositions of a continuous polycrystalline diamond film at its growth stages is also considered. The adhesion of the diamond films to the surface of hard-alloy materials is determined qualitatively. It is established that the treatment of the hard-alloy surface in the CuSO₄ solution at t = 23°C leads to the inhomogeneous removal of a cobalt binder with chipping WC grains and the formation of the porous structure in the surface layer of the WC–6% Co alloy. The treatment by the CuSO₄ etchant at t = –2°C provides the homogeneous etching of the Co binder over the boundaries of WC grains and the formation of a chemically homogeneous surface. The orientation growth and adhesion of the diamond film depend on the elemental composition of the WC–Co alloy surface after treatment by the CuSO₄ solution. If the treatment was performed at t_sln = 23°C, then the removal of copper from the defect surface WC layer is complicated during the synthesis, which provides the multidirectional growth of diamond crystals in the film along two directions, 〈111〉 and 〈110〉, which causes critical biaxial compressive stresses (2.5 GPa) and leads to low film adhesion to the hard alloy surface. If the treatment is performed at t_sln = –2°C, then the orientational growth of diamond crystals in the film occurs in one preferential crystallographic direction 〈111〉, which lowers the biaxial compressive stresses (1.7 GPa) and increases the adhesive bond of the film to the hard alloy surface. The structure imperfection calculated from the ratio of the lines of integrated intensities I₁₃₃₃/I₁₅₈₀ using the Raman spectroscopy method decreases with an increase in concentration at negative temperatures and increases at positive temperatures of the CuSO₄ solution during surface preparation.

中文翻译：

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含亚铜层的碳化钨表面金刚石膜的生长特征

表面准备是确保通过气相沉积形成的金刚石膜的所需性能的前提。在这项工作中考虑了CuSO ₄蚀刻剂的温度和浓度对硬质合金材料表面的结构和相组成的影响，并且连续多晶金刚石膜在其生长阶段的结构和相组成也受到影响。考虑过的。定性确定金刚石膜对硬质合金材料表面的附着力。已经确定，在t时处理CuSO ₄溶液中的硬质合金表面= 23°C会导致不均匀地去除带有崩裂的WC晶粒的钴粘合剂，并在WC–6％Co合金的表面层中形成多孔结构。通过在t = –2°C下用CuSO ₄蚀刻剂进行处理，可以在WC晶粒的边界上对Co粘合剂进行均匀蚀刻，并形成化学均匀的表面。金刚石膜的取向生长和附着力取决于经CuSO ₄溶液处理后的WC-Co合金表面的元素组成。如果在t _sln进行治疗= 23°C，则在合成过程中从缺陷表面WC层中去除铜很复杂，这会在膜中沿<111>和<110>两个方向进行金刚石晶体的多方向生长，从而导致临界双轴压缩应力（2.5 GPa）并导致低膜对硬质合金表面的附着力。如果在t _sln = –2°C下进行处理，则膜中金刚石晶体的取向生长会沿一个优先的结晶方向<111>发生，从而降低了双轴压缩应力（1.7 GPa），并增加了薄膜到硬质合金表面。根据积分强度线的比率I ₁₃₃₃ / I ₁₅₈₀计算出的结构缺陷在表面处理期间，使用拉曼光谱法的CuSO ₄溶液在负温度下会随着浓度的增加而降低，而在正温度下会随着浓度的增加而降低。