X-ray luminescence spectra of β-Ga₂O₃ thin films obtained by radio-frequency (RF) ion-plasma sputtering were studied at 80–300 K. The measured spectra were simulated in the framework of the linear electron–phonon coupling model. Luminescence centers with emission maxima at 2.95 and 3.14 eV tended to associate based on the temperature dependence of the selected luminescence bands. The results were analyzed.

中文翻译：

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β-Ga2 O 3薄膜的X射线发光

的透视发光光谱的β-Ga ₂ ö ₃通过无线电频率获得的薄膜（RF）离子等离子溅射物在80-300 K.所测量的光谱研究进行了模拟线性电子-声子耦合模型的框架。基于所选发光带的温度依赖性，发光中心在2.95和3.14 eV处具有发射最大值。分析结果。