Two sub-1-V MOSFETs only voltage reference designs, working in subthreshold region are proposed. They consume ultra-low power, exhibit high temperature and supply voltage independence, operate at sub-1-V supply and are suitable for fabrication using N-well CMOS technology. A voltage reference circuit (circuit-1) with dual-threshold voltage MOSFETs, which can provide a nominal output voltage of 554 mV exhibiting high temperature-compensation is proposed. Simulation results show that it has a temperature coeffcient of \(13\,\hbox {ppm}/^{\circ }\hbox {C}\) and a power consumption of 2.1 nW. Another reference circuit (circuit-2) using only single threshold voltage MOSFETs with a high nominal output of 773 mV is also proposed. Simulation results show that it has a line sensitivity of 0.073%/V and a power consumption of 2.4 nW. Statistical analysis based on Monte-Carlo simulation show that the performance of both the circuits will not be significantly affected by process variations.

提出了两个仅在亚阈值范围内工作的低于1V的MOSFET参考电压设计。它们消耗超低功率，具有高温和电源电压独立性，可在低于1V的电源下工作，并且适合使用N阱CMOS技术进行制造。提出了一种具有双阈值电压MOSFET的电压基准电路（电路1），该电路可提供554 mV的标称输出电压，并具有高温补偿功能。仿真结果表明，它的温度系数为\（13 \，\ hbox {ppm} / ^ {\ circ} \ hbox {C} \）功耗为2.1 nW。还提出了另一种参考电路（电路2），它仅使用具有773 mV的高标称输出的单阈值电压MOSFET。仿真结果表明，它的线路灵敏度为0.073％/ V，功耗为2.4 nW。基于蒙特卡洛模拟的统计分析表明，工艺变化不会显着影响两个电路的性能。