Electrical performances are strongly associated with the electrical heterogeneity of grains and grain boundaries for CaCu₃Ti₄O₁₂ (CCTO) ceramics. In this work, the dielectric ceramics of 0.1Na_0.5Bi_0.5TiO₃-0.9BaTiO₃ (NBT-BT) doped CCTO were fabricated by a conventional solid-state reaction method, and the ceramics were sintered at 1100 °C for 6 h. Relatively homogeneous microstructures are obtained, and the average grain sizes are characterized about 0.9∼1.5 μm. Impressively, a significantly enhanced breakdown field of 13.7 kV/cm and a noteworthy nonlinear coefficient of 19.4 as well as a lower dielectric loss of 0.04 at 1 kHz are achieved in the 0.94CCTO-0.06(NBT-BT) ceramics. It is found that the improved electrical properties are attributed to the increased grain boundary resistance of 3.7 × 10⁹ Ω and the Schottky barrier height of 0.7 eV. This is originated from the NBT-BT compound doping effect. This work demonstrates an effective approach to improve electrical properties of CCTO ceramics by NBT-BT doping.

电气性能与CaCu ₃ Ti ₄ O ₁₂（CCTO）陶瓷的晶粒和晶界的异质性密切相关。在这项工作中，0.1Na _0.5 Bi _0.5 TiO ₃ -0.9BaTiO ₃的介电陶瓷（NBT-BT）掺杂的CCTO通过常规的固态反应方法制备，并在1100°C下烧结陶瓷6 h。获得了相对均匀的微观结构，平均晶粒尺寸约为0.9〜1.5μm。令人印象深刻的是，在0.94CCTO-0.06（NBT-BT）陶瓷中，实现了13.7 kV / cm的击穿场的显着增强和19.4％的显着非线性系数以及0.04的更低介电损耗。据发现，该改善的电性质归因于3.7×10的增加的晶界电阻⁹ Ω和0.7电子伏特的肖特基势垒高度。这源于NBT-BT化合物的掺杂作用。这项工作证明了通过NBT-BT掺杂改善CCTO陶瓷电性能的有效方法。