g-C₃N_4-x with nitrogen-deficient structure was prepared by raising the thermal etching temperature to 625 °C, and Bi₂MoO₆ was prepared through hydrothermal synthesis. The Bi₂MoO₆/g-C₃N_4-x composite photocatalyst with electron transfer mechanism as Z-scheme was then synthesized through joint heating at 400 °C. Mechanism analysis indicated that the formation of the nitrogen deficiency and Z-scheme carrier transport path in Bi₂MoO₆/g-C₃N_4-x composite photocatalyst can reduce the recombination rate of photogenerated electron-holes and prolong the lifetime of photogenerated carriers. 0.50 Bi₂MoO₆/g-C₃N_4-x had the highest photocatalytic activity, whose degradation rates reached 95% after 1 h irradiation, more than twice the photocatalysis effect of original g-C₃N₄.

通过将热蚀刻温度提高到625°C，制备具有氮缺陷结构的gC ₃ N _4-x，并通过水热合成制备Bi ₂ MoO ₆。然后通过在400°C下联合加热，合成了具有电子转移机理的Z _2型Bi ₂ MoO ₆ / gC ₃ N _4-x复合光催化剂。机理分析表明Bi ₂ MoO ₆ / gC ₃ N _4-x中氮缺乏和Z型载流子的迁移路径的形成复合光催化剂可以降低光生电子空穴的复合率，延长光生载流子的寿命。0.50 Bi ₂ MoO ₆ / gC ₃ N _4-x具有最高的光催化活性，照射1 h后其降解率达到95％，是原始gC ₃ N _4的两倍。