Muon dynamics in phosphosilicate proton conductors P₂O₅-SiO₂ with a composition 30 mol% phosphorus oxide (30P) have been studied as a function of temperature using muon spin relaxation. For materials heat treated at 300 °C the muons implant at sites close to P-OH groups associated with water molecules. While in 1000 °C heat treated samples the muons are trapped at sites involving a bridging oxygen P-O-Si. Averaging of the local nuclear dipolar field by dynamics of the adsorbed water is observed above ca 180 K for the muon sites in the 300 °C heat treated sample. There is some evidence for further muon dynamics in this material above 250 K perhaps caused by muon diffusion.

使用μ子自旋弛豫技术研究了磷硅酸盐质子导体P ₂ O ₅ -SiO ₂组成为30 mol％氧化磷（30P）时的μ子动力学随温度的变化。对于在300°C下进行了热处理的材料，μ子会在与水分子相关的P-OH基团附近的位置植入。在1000°C的热处理过的样品中，μ子被捕获在涉及桥接氧PO-Si的位置。对于300°C热处理过的样品中的介子部位，在大约180 K以上，通过吸附水的动力学观察到局部核偶极场的平均值。有证据表明，这种材料在250 K以上可能会进一步引起介子扩散，这可能是由介子扩散引起的。