Abstract The success of Graphene has triggered the research interest in other stable, single and few-atom-thick layers of van der Waals materials, which can possess attractive and technologically useful properties. Other complex structures, such as boron nitride, MXenes and metal chalcogenides have been successfully synthesized as layered materials showing advanced properties. Here, after an introduction briefing novel 2D materials, we focus on 2D AlN and present a review covering theoretical considerations on the stability of an infinite hexagonal AlN (h-AlN) sheet, differences that occur in the electronic structure between bulk AlN and single layer and discuss possible methods of tuning their electronic and magnetic properties by manipulating the surface and strain using DFT (density functional theory) computations. We address potential applications of 2D-AlN with an emphasis on gas sensing for CO2, CO, H2, O2, NO and NO2 in the presence of NH3. Further, we discuss some growth strategies of AlN single layer and few layers on different substrates. 2D AlN layers and nanotubes with ultrawide bandgap (9.20–9.60 eV) which shows a great potential to support innovative and front-end development of deep-ultraviolet optoelectronic devices are illustrated.

中文翻译：

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二维AlN的性质和潜在应用

摘要 石墨烯的成功引发了对其他稳定、单层和少原子厚度范德华材料的研究兴趣，这些材料具有吸引人的和技术上有用的特性。其他复杂结构，如氮化硼、MXenes 和金属硫属元素化物，已成功合成为具有先进性能的层状材料。在这里，在介绍了新型 2D 材料之后，我们将重点放在 2D AlN 上，并回顾了关于无限六边形 AlN (h-AlN) 片稳定性的理论考虑，块状 AlN 和单层之间的电子结构中发生的差异并讨论通过使用 DFT（密度泛函理论）计算操纵表面和应变来调整其电子和磁特性的可能方法。我们解决了 2D-AlN 的潜在应用，重点是在 NH3 存在下对 CO2、CO、H2、O2、NO 和 NO2 的气体传感。此外，我们讨论了在不同衬底上的 AlN 单层和几层的一些生长策略。2D AlN 层和具有超宽带隙 (9.20–9.60 eV) 的纳米管显示出支持深紫外光电器件创新和前端开发的巨大潜力。