Abstract In practical applications, thin film resistance temperature detectors (RTD) are often used in the environments that the attached substrates cannot stand high temperature. Therefore, it is necessary to prepare thin film RTDs by a low temperature process. In this study, the fabrication of nickel (Ni) thin film RTDs at low temperatures is investigated by direct-current (DC) magnetron sputtering. It is found that the dense and uniform Ni thin film can be prepared even at room temperature. The effects of sputter pressure and power on thin film microscopic morphology and structure are also investigated. The Ni thin film RTDs prepared at room temperature exhibit a value of temperature coefficient of resistance (TCR) about 3000 ppm/°C and excellent repeatability under cycling temperatures.

中文翻译：

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电阻温度检测器镍薄膜的制备与表征

摘要 在实际应用中，薄膜电阻温度检测器(RTD)常用于贴合基板不能承受高温的环境中。因此，有必要通过低温工艺制备薄膜 RTD。在这项研究中，通过直流 (DC) 磁控管溅射研究了低温下镍 (Ni) 薄膜 RTD 的制造。发现即使在室温下也可以制备致密均匀的Ni薄膜。还研究了溅射压力和功率对薄膜微观形貌和结构的影响。在室温下制备的 Ni 薄膜 RTD 的电阻温度系数 (TCR) 值约为 3000 ppm/°C，并且在循环温度下具有出色的可重复性。