Abstract The Ti/MoS2 based 9 × 9 conductive bridge cross-points in Al/Cu/Ti/MoS2/Pt structure and its suitability in brain-inspired neuromorphic application have been investigated. Repeatable forming-free multilevel switching cycles with the low current compliances (CCs) of 10 μA–300 μA and long program/erase (P/E) endurance of >7 × 108 with low P/E current of 10 μA/100 μA at a high-speed of 100 ns have been obtained than pure MoS2 based devices. Copper reduction-oxidation (redox) reaction associated resistive switching mechanism through cyclic-voltammetry is also investigated. Conductivity modulated potentiation and depression results as well as LTP/LTD characteristics have been explored. Significantly low energy consumption in between 17 fJ to 398 fJ has been obtained.

中文翻译：

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使用基于 Ti/MoS2 的导电桥接交叉点的电阻开关记忆和人工突触

摘要 研究了 Al/Cu/Ti/MoS2/Pt 结构中基于 Ti/MoS2 的 9 × 9 导电桥交叉点及其在脑启发神经形态应用中的适用性。具有 10 μA–300 μA 低电流合规性 (CC) 和 >7 × 108 长编程/擦除 (P/E) 耐久性的可重复无成型多级开关循环，在 10 μA/100 μA 的低 P/E 电流下比纯基于 MoS2 的器件获得了 100 ns 的高速。还通过循环伏安法研究了铜还原氧化（氧化还原）反应相关的电阻转换机制。已经探索了电导调制的增强和抑制结果以及 LTP/LTD 特性。已获得 17 fJ 至 398 fJ 之间的显着低能耗。