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Strategy for Constructing Nitrogen-Doped Graphene Structure by Patching Reduced Graphene Oxide under Low Temperature and Its Application in Supercapacitors
Industrial & Engineering Chemistry Research ( IF 3.8 ) Pub Date : 2020-03-19 , DOI: 10.1021/acs.iecr.9b05941 Zeyu Chen 1 , Xiyi Tan 1 , Chuying Yu 1 , Wenbin Zhong 1
Industrial & Engineering Chemistry Research ( IF 3.8 ) Pub Date : 2020-03-19 , DOI: 10.1021/acs.iecr.9b05941 Zeyu Chen 1 , Xiyi Tan 1 , Chuying Yu 1 , Wenbin Zhong 1
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There are many holes and oxygen groups in reduced graphene oxide (rGO), which influences its conductivity, packing density, mechanical performance, thermal properties, and optical absorption. To construct relatively complete graphene from graphene oxide (GO), a strategy of patching rGO has been proposed. N-doped graphene (NGpy-Ni) was prepared through the hydrothermal treatment of GO, pyridine, and nickel sulfate with subsequent annealing at 300 °C. Pyridine can act as carbon and nitrogen sources and interact with GO to obtain N-doped pyridine-containing rGO. Pyridine that existed on rGO and/or N-doped amorphous carbon is partially graphitized with the nickel metal derived from nickel sulfate by 300 °C annealing, which can patch the defects of rGO to consummate the graphene structure. NGpy-Ni possesses a high packing density and excellent electrochemical performance. This strategy is promising for a large-scale production of low-defect N-doped graphene from GO.
中文翻译：
低温修补氧化石墨烯构建氮掺杂石墨烯的策略及其在超级电容器中的应用
还原氧化石墨烯（rGO）中有许多空穴和氧基团，这会影响其导电性，堆积密度，机械性能，热性能和光学吸收率。为了从氧化石墨烯（GO）构造相对完整的石墨烯，提出了修补rGO的策略。通过对GO，吡啶和硫酸镍进行水热处理，然后在300°C下进行退火，可以制得N掺杂的石墨烯（NG py-Ni）。吡啶可以充当碳源和氮源，并与GO相互作用以获得含N掺杂吡啶的rGO。rGO和/或N掺杂的无定形碳上存在的吡啶通过300°C退火被硫酸镍衍生的镍金属部分石墨化，这可以修补rGO的缺陷以完善石墨烯结构。NG py-Ni具有高堆积密度和优异的电化学性能。该策略有望从GO大规模生产低缺陷的N掺杂石墨烯。
更新日期：2020-04-24
中文翻译：
低温修补氧化石墨烯构建氮掺杂石墨烯的策略及其在超级电容器中的应用
还原氧化石墨烯（rGO）中有许多空穴和氧基团，这会影响其导电性，堆积密度，机械性能，热性能和光学吸收率。为了从氧化石墨烯（GO）构造相对完整的石墨烯，提出了修补rGO的策略。通过对GO，吡啶和硫酸镍进行水热处理，然后在300°C下进行退火，可以制得N掺杂的石墨烯（NG py-Ni）。吡啶可以充当碳源和氮源，并与GO相互作用以获得含N掺杂吡啶的rGO。rGO和/或N掺杂的无定形碳上存在的吡啶通过300°C退火被硫酸镍衍生的镍金属部分石墨化，这可以修补rGO的缺陷以完善石墨烯结构。NG py-Ni具有高堆积密度和优异的电化学性能。该策略有望从GO大规模生产低缺陷的N掺杂石墨烯。
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