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Achievement of High-Level Reverse Intersystem Crossing in Rubrene-Doped Organic Light-Emitting Diodes
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-03-19 , DOI: 10.1021/acs.jpclett.0c00451 Xiantong Tang 1 , Ruiheng Pan 2 , Xi Zhao 1 , Hongqiang Zhu 3 , Zuhong Xiong 1
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-03-19 , DOI: 10.1021/acs.jpclett.0c00451 Xiantong Tang 1 , Ruiheng Pan 2 , Xi Zhao 1 , Hongqiang Zhu 3 , Zuhong Xiong 1
Affiliation
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Using the fingerprint magneto-electroluminescence trace, we observe a fascinating high-level reverse intersystem crossing (HL-RISC) in rubrene-doped organic light-emitting diodes (OLEDs). This HL-RISC is achieved from high-lying triplet states (T2,rub) transferred from host triplet states by the Dexter energy transfer to the lowest singlet states (S1,rub) in rubrene. Although HL-RISC decreases with bias current, it increases with lowering temperature. This is contrary to the temperature-dependent RISC from conventional thermally activated delayed fluorescence, because HL-RISC is an exothermic process instead. Moreover, owing to the competition of exciton energy transfer with direct charge trap, HL-RISC changes nonmonotonically with the dopant concentration and increases luminous efficiency to a maximum at 10% of rubrene, which is about ten times greater than that from the pure-rubrene device. Additionally, the HL-RISC process is not observed in bare rubrene-doped films because of the absence of T2,rub. Our findings pave the way for designing highly efficient orange fluorescent OLEDs.
中文翻译：
掺杂钌的有机发光二极管高阶逆系统间交叉的实现
使用指纹磁致电致发光迹线，我们观察到了迷人的高水平反向系统间交叉（HL-RISC），其掺杂了红荧烯掺杂的有机发光二极管（OLED）。这种HL-RISC是通过从Dexter能量转移到最低单重态（S 1，rub）从主体三重态转移到宿主三重态的高三重态（T 2，rub）实现的）中的红荧烯。尽管HL-RISC随着偏置电流而减小，但随着温度降低而增大。这与传统的热活化延迟荧光产生的依赖温度的RISC相反，因为HL-RISC是放热过程。此外，由于激子能量转移与直接电荷陷阱的竞争，HL-RISC随掺杂剂浓度非单调变化，并且在红荧烯的10％处将发光效率提高到最大值，这比纯钌的发光效率大十倍。设备。此外，由于不存在T 2，rub，因此在裸露的红荧烯掺杂薄膜中未观察到HL-RISC工艺。我们的发现为设计高效的橙色荧光OLED铺平了道路。
更新日期：2020-04-24
中文翻译：
掺杂钌的有机发光二极管高阶逆系统间交叉的实现
使用指纹磁致电致发光迹线，我们观察到了迷人的高水平反向系统间交叉（HL-RISC），其掺杂了红荧烯掺杂的有机发光二极管（OLED）。这种HL-RISC是通过从Dexter能量转移到最低单重态（S 1，rub）从主体三重态转移到宿主三重态的高三重态（T 2，rub）实现的）中的红荧烯。尽管HL-RISC随着偏置电流而减小，但随着温度降低而增大。这与传统的热活化延迟荧光产生的依赖温度的RISC相反，因为HL-RISC是放热过程。此外，由于激子能量转移与直接电荷陷阱的竞争，HL-RISC随掺杂剂浓度非单调变化，并且在红荧烯的10％处将发光效率提高到最大值，这比纯钌的发光效率大十倍。设备。此外，由于不存在T 2，rub，因此在裸露的红荧烯掺杂薄膜中未观察到HL-RISC工艺。我们的发现为设计高效的橙色荧光OLED铺平了道路。
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