To surmount the scalability limitations of the nanoelectronics industry, the invention of resistance random access memory (RRAM) has drawn considerable attention in recent years for being a new-era memory. Nevertheless, the data transmission speed of RRAM is confined by virtue of its sequential reading nature. To improve upon this weakness, a hybrid optical/electric memory with I_ON/I_OFF ratio up to 10⁵ and laser-level optical signal is proposed. The device was engineered through an adroit design of integrating a random laser (RL) into the conducting bridge random access memory (CBRAM). According to the electrochemical metallization (ECM) effect of CBRAM, agglomerative silver nanoparticles form in the insulating layer during the ON/OFF switching process, which can serve as scattering centers. By adding CdSe/ZnS quantum dots (QDs) as the gain medium, a random laser system is obtained. Due to the quantum confinement effect, the device also features spectral tunable signal feedback by modulating the size of the QDs. In this study, devices with two different sizes of QDs are demonstrated such that a multiple-bit AND gate logic can be achieved. The innovation behind this RL-ECM memory might facilitate a key step toward the development of ultrahigh-speed information technology.

中文翻译：

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存储器中多余的随机激光作用，用于混合光/电逻辑

为了克服纳米电子工业的可扩展性限制，电阻随机存取存储器（RRAM）的发明作为一种新时代的存储器近年来受到了相当大的关注。然而，RRAM的数据传输速度由于其顺序读取的性质而受到限制。为了改善这一弱点，混合光/电存储器的I _ON / I _OFF比率高达10 ⁵并提出了激光级光信号。该设备是通过将随机激光器（RL）集成到导电桥随机存取存储器（CBRAM）中的明智设计而设计的。根据CBRAM的电化学金属化（ECM）效应，在开/关切换过程中，绝缘层中会形成团聚的银纳米粒子，这些银纳米粒子可以充当散射中心。通过添加CdSe / ZnS量子点（QDs）作为增益介质，可以获得随机激光系统。由于量子限制效应，该器件还具有通过调制QD尺寸来实现频谱可调信号反馈的功能。在本研究中，演示了具有两种不同大小的QD的设备，从而可以实现多位AND门逻辑。