BiFeO3-Based Flexible Ferroelectric Memristors for Neuromorphic Pattern Recognition,ACS Applied Electronic Materials

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BiFeO3-Based Flexible Ferroelectric Memristors for Neuromorphic Pattern Recognition
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-03-19 , DOI: 10.1021/acsaelm.0c00094
Haoyang Sun ₁ , Zhen Luo ₁ , Letian Zhao ₁ , Chuanchuan Liu ₁ , Chao Ma ₁ , Yue Lin ₁ , Guanyin Gao ₁ , Zhiwei Chen ₁ , Zhiwei Bao ₁ , Xi Jin ₁ , Yuewei Yin ₁ , Xiaoguang Li _{1,

2}

Affiliation

Flexible ferroelectric devices have been a hot-spot topic because of their potential wearable applications as nonvolatile memories and sensors. Here, high-quality (111)-oriented BiFeO₃ ferroelectric films are grown on flexible mica substrates through an appropriate design of SrRuO₃/BaTiO₃ double buffer layers. BiFeO₃ exhibits the largest polarization (saturated polarization P_s ≈ 100 μC/cm², remnant polarization P_r ≈ 97 μC/cm²) among all the reported flexible ferroelectric films, and ferroelectric polarization is very stable in 10⁴ bending cycles under 5 mm radius. Accordingly, the ferroelectric memristor behaviors are demonstrated with continuously tunable resistances, and thus, the functionality of spike-timing-dependent plasticity is achieved, indicating the capability of flexible BiFeO₃-based memristors as solid synaptic devices. Moreover, in artificial neural network simulations based on the experimental characteristics of the memristor, a high recognition accuracy of ∼90% on handwritten digits is obtained through online supervised learning. These results highlight the potential wearable applications of flexible ferroelectric memristors for data storage and computing.

中文翻译：

基于BiFeO ₃的柔性铁电忆阻器用于神经形态识别

柔性铁电设备由于其作为非易失性存储器和传感器的潜在可穿戴应用而成为热门话题。在此，通过适当设计SrRuO ₃ / BaTiO ₃双缓冲层，在柔性云母基板上生长了高质量（111）取向的BiFeO ₃铁电薄膜。的BiFeO _3件展品最大极化（饱和极化P_小号≈100μC/厘米²，剩余极化P _{- [R} ≈97μC/厘米²之间所有的）报告的柔性铁电体膜，和铁电偏振是在10非常稳定⁴半径5 mm以下的弯曲循环。因此，用连续可调的电阻证明了铁电忆阻器的行为，因此，实现了依赖于尖峰定时的可塑性的功能，表明了基于挠性的BiFeO ₃的忆阻器作为固体突触装置的能力。此外，在基于忆阻器实验特性的人工神经网络仿真中，通过在线监督学习可以获得对手写数字的约90％的高识别精度。这些结果突出了柔性铁电忆阻器在数据存储和计算方面的潜在可穿戴应用。

更新日期：2020-03-19

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