Abstract We report the fabrication of ultra-thin GaN (0002) nanostructures based self-powered ultraviolet photodetector on Si (111) substrate. Non-homogeneous GaN nano-islands were perceived on Si surface with a thickness of ~30 nm and an average distribution density of 2 × 1010 cm−2. Even at low dimension GaN-nanostructures film, the capability of ultraviolet detection of fabricated photodetector added novelty to this work, where performance parameters such as photosensitivity (~102), detectivity (~109 Jones), responsivity (1.76 mA/W) and noise equivalent power (3.5 × 10−11 WHz−1/2) under self-powered mode were observed. The transient photo-response measurement revealed a rapid rise and decay time constants of ~18 ms and ~27 ms respectively. Under varying optical power (1 mW–13 mW), the GaN photodetector displayed significant enhancement in photocurrent with increasing optical power. The performance of the fabricated detector has been also analysed under varying bias voltage where it revealed significantly enhanced responsivity (23 fold) and detectivity (~1000 fold). Such nanostructured self-powered GaN-based ultraviolet photodetector paves the way towards the fabrication of energy-efficient optoelectronic devices.

中文翻译：

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基于超薄 GaN 纳米结构的自供电紫外光电探测器，通过非均质 Au-GaN 界面

摘要 我们报告了在 Si (111) 衬底上制造基于超薄 GaN (0002) 纳米结构的自供电紫外光电探测器。在 Si 表面发现非均匀 GaN 纳米岛，厚度约为 30 nm，平均分布密度为 2 × 1010 cm-2。即使在低维 GaN 纳米结构薄膜中，制造的光电探测器的紫外探测能力也为这项工作增添了新颖性，其中性能参数如光敏度 (~102)、探测度 (~109 琼斯)、响应度 (1.76 mA/W) 和噪声观察到自供电模式下的等效功率 (3.5 × 10−11 WHz−1/2)。瞬态光响应测量显示分别为~18 ms 和~27 ms 的快速上升和衰减时间常数。在不同的光功率 (1 mW–13 mW) 下，随着光功率的增加，GaN光电探测器显示出光电流的显着增强。制造的探测器的性能也在不同的偏置电压下进行了分析，其中显示响应度（23 倍）和探测度（~1000 倍）显着增强。这种纳米结构的自供电 GaN 基紫外光电探测器为制造节能光电器件铺平了道路。