Undoped SnO₂ and indium doped SnO₂thin films, with different indium concentrations (1, 2, 3 and 4at.%), synthesized by sol-gel spin-coating method on glass substrates were investigated using X-ray diffractometer (XRD), atomic force microscopy (AFM), UV–vis spectroscopy, photoluminescence spectroscopy (PL) and four-point probe measurements. The XRD patterns showed that all of the films are polycrystalline with tetragonal rutile structure and the crystallite sizes are found to decrease with indium doping from 7.58 nm to 6.62 nm. The AFM results of our films indicated that the surface roughness decreases with indium doping. All the samples have a high transmittance, greater than 80 %, in the visible range with an optical band gap varying from 3.82 eV to 3.75 eV. The room temperature photoluminescence spectra showed the same position of peaks for each emission. The peak at 324.4 nm corresponds to the excitation transitions from the conduction band to the valence band, the other emission peaks are related to oxygen vacancies (V_O°, V_O⁺, V_O⁺⁺) which are centred at 364, 379, 418, and 467 nm. Furthermore, the decreased intensity of the PL curves was linked to the diminution in oxygen vacancies during indium doping. The strong and narrower UV light emission peak was observed for sample doped with indium 1at.% which can be applicable for ultraviolet light emitting diodes (UV-LED_S).These films displayed low electrical resistivity ranging between 2.25 × 10⁻³ and 4.95 × 10⁻³ Ω cm.

未掺杂的SnO ₂和铟掺杂的SnO ₂使用X射线衍射仪（XRD），原子力显微镜（AFM），UV对通过溶胶-凝胶旋涂法在玻璃基板上合成的具有不同铟浓度（1、2、3和4at。％）的薄膜进行了研究-可见光谱，光致发光光谱（PL）和四点探针测量。X射线衍射图谱表明，所有的薄膜都是具有金红石四方晶结构的多晶，并且随着铟掺杂从7.58nm减小到6.62nm，晶粒尺寸减小。我们的膜的AFM结果表明，表面粗糙度随铟掺杂而降低。所有样品均在可见光范围内具有大于80％的高透射率，并且光学带隙在3.82 eV至3.75 eV之间变化。室温光致发光光谱显示每次发射的峰位置相同。峰值在324。_Ó °，V _Ò ⁺，V _ö ⁺⁺），它是在364中心，379，418，和467纳米。此外，PL曲线强度的降低与铟掺杂过程中氧空位的减少有关。掺有1at。％铟的样品观察到强而窄的UV发光峰，这些样品可用于紫外发光二极管（UV-LED _S），这些膜的电阻率较低，范围为2.25×10 ^-3至4.95× 10 ^-3 Ω厘米。